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Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.


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Patent
01 Apr 2009
TL;DR: In this article, the phase shift mask blank is used to prevent the occurrence of a loading effect by using a phase shift film, a light-shielding mask, and an inorganic material resistant to etching.
Abstract: Disclosed is a phase shift mask blank ( 11 ) that can prevent the occurrence of a loading effect. The phase shift mask blank ( 11 ) includes a phase shift film ( 5 ) containing silicon, a light-shielding film ( 2 ) made of a material resistant to etching of the phase shift film ( 5 ), and an etching mask film ( 3 ) made of an inorganic material resistant to etching of the light-shielding film ( 2 ), which are formed in this order on a substrate ( 1 ) transparent to exposure light. Assuming that the thickness of the phase shift film ( 5 ) is t 1 , the etching rate of the phase shift film ( 5 ) by dry etching with an etchant using the etching mask film ( 3 ) and the light-shielding film ( 2 ) as a mask is v 1 , the thickness of the etching mask film ( 3 ) is t 2 , and the etching rate of the etching mask film ( 3 ) by dry etching with the above etchant is v 2 , (t 1 /v 1 )≦(t 2 /v 2 ) is satisfied.

10 citations

Patent
29 Jan 1993
TL;DR: In this article, a phase shift mask provided with prescribed correction patterns 101b at the ends of a mask pattern region of a specified mode or in the boundary parts of the mask pattern regions of plural modes is used to expose diversified and fine patterns in the process for production of the semiconductor device or semiconductor integrated circuit device.
Abstract: PURPOSE:To provide the reduction stepping method which allows exposing of diversified and fine patterns in the process for production of the semiconductor device or semiconductor integrated circuit device. CONSTITUTION:This method consists in executing reduction stepping by using a phase shift mask provided with prescribed correction patterns 101b at the ends of a mask pattern region of a specified mode or in the boundary parts of the mask pattern regions of plural modes. Since an end effect, etc., are offset by the correction patterns, the exposing of the diversified and fine patterns is executed.

10 citations

Patent
07 May 1992
TL;DR: In this article, a sidewall phase shift mask is formed on both sides of each phase shift film in a spatial frequency modulation type phase shift masks to reduce the light intensity occurring from the end part of the phase shift films, as the forming factor of the bridge pattern film.
Abstract: In order to manufacture a phase shift mask for hyperfine patterning, a sidewall phase shift mask is formed on both sides of each phase shift film in a spatial frequency modulation type phase shift mask Accordingly, the light intensity occurring from the end part of the phase shift film, as the forming factor of the bridge pattern film, is reduced by the sidewall phase shift film

10 citations

Proceedings ArticleDOI
28 Jun 2005
TL;DR: In this article, a DUV mask writer with a spatial light modulator (SLM) was used for phase shift mask (PSM) patterning at the 65 nm and 45 nm nodes.
Abstract: Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2nd level alternating PSM patterning at the 65 nm and 45 nm nodes.

10 citations

Patent
24 May 2002
TL;DR: An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm as mentioned in this paper.
Abstract: An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.

10 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20219
202017
201913
201824
201730
201632