Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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TL;DR: In this paper, an attenuated phase-shift mask (att-PSM) with annular illumination has been used to print 18nm-long line patterns in aerial images.
10 citations
Patent•
06 May 2015
10 citations
Patent•
28 Dec 1994TL;DR: In this article, a method for designing the photomask in the course of designing the Levenson-type phase shift mask, capable of automatically arranging the shifter, of not causing a contradictory spot in a circuit designing stage and of automatically forming a final layout achieving maximum integrity is presented.
Abstract: Method and apparatus for designing the photomask in the course of designing the Levenson-type phase shift mask, capable of automatically arranging the shifter, of not causing a contradictory spot in a circuit designing stage and of automatically forming a final layout achieving maximum integrity. The method includes the steps of: forming symbolic layout data in which a distance between adjacent clear areas is set to an arbitrary value; determining regions having a mutual phase difference 0° or 180° of light transmitting through adjacent patterns corresponding to the clear areas in the symbolic layout data; executing compaction of the symbolic layout in a manner that design rule S1 is adopted to the clear areas neighboring with the phase difference of 180° and design rule S2 is adopted to the clear areas neighboring with the phase difference of 0°; and forming mask layout data such that S1 is less than S2.
10 citations
05 Jul 2000
TL;DR: Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 05 micrometers as mentioned in this paper. This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process.
Abstract: Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 05 micrometers This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub- 50 nm isolated line pattern formation As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node
10 citations
Patent•
NEC1
TL;DR: In this paper, a phase-inverting light transmission part is formed inside the light-blocking part which blocks light that is radiated onto a transparent substrate so as to cover a shifter missing part defect.
Abstract: In a halftone phase-shift mask, a phase-inverting light transmission part is formed inside the light-blocking part which blocks light that is radiated onto a transparent substrate so as to cover a shifter missing part defect, this phase-inverting light transmission part inverting the phase of light that passes through it with respect to light that passes through a light transmission part. The ratio between the surface areas of the phase-inverting light transmission part and the light-blocking part is established so that the transfer characteristics of the light-blocking part during exposure are substantially the same as those of the translucent phase-shift part.
10 citations