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Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.


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Patent
22 Jan 1999
TL;DR: In this paper, the front surface of the halftone phase shifter film is brought into contact with the active species of the introducing gas generated in an after-glow section 4 on the outer side of a glow discharge section 3 by subjecting gas contg. oxygen or nitrogen, or the oxygen and the nitrogen to plasma excitation, by which only the surface layer part thereof is oxidized or nitrized or oxynitride and the transmittance and reflectivity of the exposure light in the Halftone Phase Shift Mask are improved.
Abstract: PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask which may be improved in the transmittance at a specific wavelength in a rang from microorder to several tens % without the impairment of the basic characteristics, such as phase shift angle, required for a halftone phase shifter film after the deposition of the halftone phase shifter film corresponding to an arbitrary exposure wavelength and a process for producing a halftone type phase shift mask blank, etc. SOLUTION: The front surface of the halftone phase shifter film 2 after deposition is brought into contact with the active species of the introducing gas generated in an after-glow section 4 on the outer side of a glow discharge section 3 by subjecting gas contg. oxygen or nitrogen, or the oxygen and the nitrogen to plasma excitation, by which only the surface layer part thereof is oxidized or nitrized or oxynitride and the transmittance and reflectivity of the exposure light in the halftone phase shifter film are improved.

10 citations

Patent
10 Mar 2006
TL;DR: In this article, residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of the surface of the phase shift mask.
Abstract: Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase shift mask. Diffusion of the residual ions into the surface of the mask is suppressed during a photomask wet cleaning process in order to prevent the haze.

10 citations

Patent
30 Oct 1998
TL;DR: In this paper, a mask (50) for use in lithographic printing includes a pattern (54) formed of a material which is substantially opaque with respect to a wavelength of radiation being used in the lithographic print.
Abstract: A mask (50) for use in lithographic printing includes a pattern (54) formed of a material which is substantially opaque with respect to a wavelength of radiation being used in the lithographic printing. The pattern (54) on the mask (50) corresponds to a desired feature to be formed on a substrate and includes a grating (58) having an alternating pattern of opaque and transparent regions (60, 62). The alternating pattern provides destructive interference of radiation at the substrate in a region corresponding to the desired feature due to diffraction, thereby improving resolution at the substrate. In addition, the alternating pattern (60, 62) on the mask (50) increases a number of focal planes at which the destructive interference occurs and thereby improves a focus process latitude by providing an acceptable resolution over variations in a distance between the mask (50) and the substrate.

10 citations

Proceedings ArticleDOI
12 May 2005
TL;DR: An automated co-optimization of embedded phase shift mask transmission factor and exposure system illumination source profile for improving image based merit functions and an assessment on deviating from the industry accepted 6% transmission discussed.
Abstract: Progress in photomask technology, exposure system flexibility and lithographic computation has enabled the practical exploration of jointly optimized lithographic imaging variables. The interaction between certain components, such as mask and illuminator, allows co-optimized solutions to frequently achieve better results when compared with sequential, single factor optimizations. In this work, we focus on the automated co-optimization of embedded phase shift mask transmission factor and exposure system illumination source profile for improving image based merit functions. Algorithm descriptions are provided and the critical interaction of optimization parameters with mask layout is highlighted. Our co-optimization algorithm is exercised on the more challenging random logic case and the concept of manipulating or restricting layout conditions to improve the achieved merit function is studied. Finally, suggestions for the experimental prototyping of solutions are provided and an assessment on deviating from the industry accepted 6% transmission discussed.

10 citations

Patent
25 Dec 2003
TL;DR: In this paper, a white defect in a halftone phase shift mask or a recessed phase defect in Levenson type phase shift masks is corrected to match the phase by depositing an electron beam CVD film 6 having high transmittance and a high phase effect such as tetramethoxysilane or the like.
Abstract: PROBLEM TO BE SOLVED: To correct a white defect having a phase effect in a halftone phase shift mask or to correct a recessed phase defect in a Levenson type phase shift mask SOLUTION: A white defect in a halftone phase shift mask or a recessed phase defect in a Levenson type phase shift mask is corrected to match the phase by depositing an electron beam CVD film 6 having high transmittance and a high phase effect such as tetramethoxysilane or the like When too high transmittance is obtained in the correction of a white defect by depositing an electron beam CVD film 6 of tetramethoxysilane in a halftone phase shift mask, a focused ion beam CVD film or an electron beam CVD film using a carbon-based source gas having low transmittance is further deposited to control the transmittance COPYRIGHT: (C)2005,JPO&NCIPI

10 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20219
202017
201913
201824
201730
201632