Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Phase shift mask and fabrication method thereof

Abstract: A phase shift mask and a fabrication method thereof are used in a semiconductor light exposing process, where a CD (Critical Dimension) formed on a wafer is the same in all directions, even when a pattern is arranged on the mask at an anisotropic pitch. The phase shift mask includes a number of light transmitting regions and first and second phase shift regions arranged among the light transmitting regions. The first and second phase shift regions have a refractive index different from that of the light transmitting region. The first and second phase shift regions also have a transmittance different from each other.

Phase shift mask and mask blank used for the same

Abstract: PURPOSE: To provide a halftone type phase shift mask constituted to easily and efficiently prevent such an incident that the etching of a substrate is resulted at the time of production and that the deviating of the phase difference obtd. with finished products from a design value is resulted. CONSTITUTION: This phase shift mask has the substrate transparent to exposing light and optical patterns which consist of a material translucent to exposing light and are formed to impart optical phase differences to the exposing light transmitted through the substrate. These optical patterns are formed by providing the surface of the substrate 1 with a chromium compd. layer 2 and a molybdenum nitroxide silicide layer 3 in this order. More preferably the chromium compd. 2 is either of chromium nitroxide or chromium nitrooxicarbide.

Phase-shift mask blank and process for the production thereof comprising a semi transparent film with silicon and nitrogen

Abstract: PURPOSE: To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof. CONSTITUTION: The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.

Simulation based defect printability analysis on Attenuated Phase shifting masks

Abstract: Simulated wafer images for Attenuated Phase Shift Mask (ATTPSM) features are performed by the Virtual Stepper System. The ATTPSM test reticles were prepared with programmed defects (hard defects and phase defects) on line/space patterns, contact hole patterns, and rectangle patterns for 150-nm design rules. Each defect area was inspected using KLA-Tencor's UV-HR365 and SLF27 inspection systems. Virtual Stepper simulations are compared with Aerial Image Measurement System (AIMSTM) simulation at best focus and at multiple defocus levels. In addition, simulation accuracy from different inspection images is compared.

Manufacturing of half-tone phase-shift masks II: writing and process

Abstract: A half-tone phase shift mask process has been developed. The writing and process for normal masks are found to be applicable to HT-PSMs. A dry etch process has been adopted to etch the shifter. Several characteristics of HT-PSMs such as CD uniformity, CD linearity, edge roughness and corner rounding, positional accuracy in the EB process, selectivity in dry etch, pattern profile, durability against cleaning, pelliclization and a blind pattern are evaluated. The process shows a good performance sufficient for first generation 64 MDRAM mask making. The EB writing causes no charge-up problem. The selectivity of HT-shifter to an i-line resist and an new type EB resist in dry etch is satisfactory and the selectivity to a fused silica substrate is more than 300. An exposure test was conducted with our HT-PSM. Coherency factor ((sigma) ) of a stepper is found to strongly affect the defocus range and exposure latitude.