Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Self-aligned alternating phase shift mask patterning process

Abstract: A method and apparatus for making phase shift masks are provided wherein an anti-reflective coating used on an opaque pattern layer of the mask fully covers the opaque pattern layer and has not been etched in the etching process to form the phase shift mask. A two-exposure method to form the phase shift mask is used wherein a photoresist having a defined dose-to-clear level is coated on the surface of the mask and the lower surface of the mask is exposed to a blanket exposure in an energy amount less than the dose-to-clear level. The open areas of the upper surface of the mask to be etched are exposed to an energy dose in an amount less than the dose-to-clear level, with the sum of the amounts of the lower surface energy and upper surface energy being at least the dose-to-clear level. The method and apparatus minimizes and/or avoids etching of the anti-reflective coating.

Mask for optical exposure

Abstract: PURPOSE:To improve the resolution on a photographing surface by constituting a phase shift film of a translucent material which generates absorption to exposure light CONSTITUTION:This phase shift mask is constituted of the translucent phase shift film which generates the absorption to the exposure light on a transparent quartz substrate 11 which is transparent to the exposure light, such as KrF excimer laser SOG(spin on glass), silicon phosphorus glass, silicon phosphorus boron glass, org high-polymer film, etc, are used as the essential material of the phase shift film 12 These films can be constituted by a vapor growth method The transmittance of the phase shift film to the exposure light is set at 40 to 90%, by which the resolution rate is additionally improved Fine working down to a min line width of 02mum is possible if such mask for optical exposure is used

Active control of phase shift mask etching process

Abstract: A system for monitoring and controlling aperture etching in a complimentary phase shift mask is provided. The system includes one or more light sources, each light source directing light to one or more apertures etched on a mask. Light reflected from the apertures is collected by a measuring system, which processes the collected light. Light passing through the apertures may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the depth and/or width of the openings on the mask. The measuring system provides depth and/or width related data to a processor that determines the acceptability of the aperture depth and/or width. The system also includes a plurality of etching devices associated with etching apertures in the mask. The processor selectively controls the etching devices so as to regulate aperture etching.

Method for correcting device pattern of mask

Abstract: PROBLEM TO BE SOLVED: To provide a method for correcting the device pattern of a mask by which the exposure pattern on a wafer can rapidly simulated with high accuracy and the device pattern can be corrected with high accuracy. SOLUTION: A Levenson phase shift mask 4 is subjected to projection exposure and the intensity distribution of the light which transmitted through the Levenson phase shift mask 4 is detected by a CCD camera 6, to obtain the relation between the defocus quantity on the CCD camera 6 and the dimension of the optical pattern. The phase difference abnormality and transmittance difference abnormality are detected, base on the relation to correct the device pattern of the Levenson phase shift mask 4. In the correction process, the relation between the retreating amount of the sidewall from the edge of the light shielding film in the shifter part and the transmittance difference is preliminarily obtained, and then the retreating amount of the sidewall to give zero difference in the transmittance is determined, based on the relation to correct the device pattern of the mask.

Self alignment type phase shift mask and a method for manufacturing the same

Abstract: PROBLEM TO BE SOLVED: To provide a self alignment type phase shift mask that can solve problems of degradation in transfer accuracy caused by unnecessary reflected light on a substrate face as an object of transfer and on a mask face without giving adverse influences on transmitting property for exposure light during exposure. SOLUTION: The self alignment type phase shift mask has the following layer structure from one surface of a transparent substrate: a first transmitting part comprising a phase shift transmitting film; a second transmitting part outside the first part, comprising the phase shift transmitting film; a third transmitting part outside the second part, comprising a semitransmitting film and the phase shift transmitting film; and an outermost light-shielding part comprising the semitransmitting film, a light shielding film and the phase shift transmitting film. By controlling the film thickness and refractive index of the semitransmitting film and controlling the refractive index of the phase shift transmitting film, the light transmitting through the first transmitting part and through the second transmitting part generates 180° phase inversion, while the light transmitting the second transmitting part and through the third transmitting part generates 180° phase inversion. Further, by controlling the film thickness of the phase shift transmitting film, the reflected light on the surface of the phase shift transmitting film and on the surface of the light shielding film generates 180° phase inversion. COPYRIGHT: (C)2007,JPO&INPIT