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Showing papers on "Photodiode published in 1981"


01 Jan 1981

2,169 citations


Journal ArticleDOI
TL;DR: In this article, an experimental study has been performed on the temporal resolution of these single-photon avalanche diodes (SPADs) in measurements of the shape of ultrashort light pulses.
Abstract: Avalanche p–n photodiodes with uniform breakdown over the junction area are known to be capable of single‐photon detection. An experimental study has been performed on the temporal resolution of these single‐photon avalanche diodes (SPADs) in measurements of the shape of ultrashort light pulses. By using an active‐quenching circuit, pulsed operation of the device has been obtained in accurately controlled conditions, avoiding spurious effects met in previous passive‐quenching circuits. Laser pulses with durations down to 150 ps FWHM have been used; the results obtained show that the resolution is remarkably better than this value. Performances and limitations of SPADs are discussed; temporal resolutions of a few tens of picoseconds may be expected.

252 citations


Journal ArticleDOI
TL;DR: In this paper, various avalanche photodiode structures fabricated in quaternary and ternary alloys are discussed, and the ion implanted GaAlAsSb APD's exhibit a high gain of 100, 82 percent quantum efficiency, and a FWHM of 400 ps.
Abstract: GaAlAsSb quaternary alloys and GaAlSb ternary alloys have been grown by liquid phase epitaxy (LPE) at 550°C and 450°C, respectively. The material compositions and epitaxial structures are suitable for fabricating photodiodes sensitive in the 1.0-1.8 \mu m wavelength range. Various avalanche photodiode structures fabricated in these materials are discussed. The ion implanted GaAlAsSb APD's exhibit a high gain of 100, 82 percent quantum efficiency, and a FWHM of 400 ps. The heterojunction GaAlAsSb APD's have a gain of 40, 92 percent quantum efficiency, and a FWTM of 150 ps. The only remaining material problem which limits the performance of these devices is the high-surface leakage current.

68 citations


Journal ArticleDOI
TL;DR: In this article, a longwavelength back-illuminated PIN photodiodes capable of detecting optical signals at multigigabit modulation rates have been fabricated and tested in a stripline circuit.
Abstract: Long-wavelength back-illuminated PIN photodiodes capable of detecting optical signals at multigigabit modulation rates have been fabricated and tested in a stripline circuit. A transit-time-limited response time of about 30 ps has been realised in a 25 μm-diameter diode.

68 citations


Journal ArticleDOI
TL;DR: Two silicon photo diode array devices were tested as parallel recording detectors for electron energy loss spectrometry (EELS) and the minimum detectable concentration of calcium is estimated to be ten times better for ELLS than EDS X-ray analysis.

67 citations


Journal ArticleDOI
TL;DR: In this article, a modulated barrier photodiode (MBP) was developed for optical communication systems, which achieved an optical gain of 1000 at 1.5 nW incident power and a fall time of 600 psec.
Abstract: A new majority‐carrier photodetector, called a modulated barrier photodiode (MBP), grown by molecular beam epitaxy has been developed. In sharp contrast to a bipolar phototransistor, the optical gain of MBP increases with decreasing incident power. An optical gain of 1000 at 1.5 nW incident power and a fall time of 600 psec have been obtained. In addition to the application for uses as a detector in an optical communication system, the device points to the feasibility of realizing a solid‐state triode.

66 citations


Patent
11 Mar 1981
TL;DR: In this paper, an optical proximity sensor for optically detecting an object within a predetermined detection volume is described, where two lenses are spaced apart a predetermined distance in accordance with the configuration of the light-emitting diodes and the photodiodes in order to define a detection volume.
Abstract: An optical proximity sensor for optically detecting an object within a predetermined detection volume. More specifically, an optical proximity sensor is disclosed having an illuminator assembly including an illuminator lens (55) and a plurality of light-emitting diodes (53) located at first predetermined positions along the focal plane (54) of the illuminator lens (55). A detector assembly including a detector lens (65) and a plurality of photodiodes (60) located at second predetermined positions along the focal plane of the detector lens (65) is also provided. The two lenses are spaced apart a predetermined distance in accordance with the configuration of the light-emitting diodes (53) and the photodiodes (60) in order to define a predetermined detection volume. Each light-emitting diode has a corresponding photodiode, and their relative positions on their respective focal planes determine the detection volume defined by their overlapping fields of view. Thus by correctly positioning one light-emitting diode/photodiode pair with respect to each other, all the other pairs will be correctly positioned due to their predetermined locations on their respective focal planes. Additionally, a combination of optical proximity sensors, according to the invention, is disclosed wherein the sensors can be used in conjunction with a vehicle to provide a safety system for warning an operator when an object is within a volume defined by the proximity sensor combination.

55 citations


Journal ArticleDOI
01 Jan 1981
TL;DR: The device physics of silicon photodetectors is presented in detail including discussion and analysis of quantum efficiency, responsivity, ctosstalk, charge handling capacity, data rate, optical to electrical transfer function, noise sources, dynamic range, and sensitivity.
Abstract: A description of devices, architecture, and performance criteria is presented for solid-state CCD and photodiode sensors useful in acousto-optic processing systems. Special attention is given to sensors used in both bulk and integrated optical acousto-optic instantaneous Fourier transform systems. The device physics of silicon photodetectors is presented in detail including discussion and analysis of quantum efficiency, responsivity, ctosstalk, charge handling capacity, data rate, optical to electrical transfer function, noise sources, dynamic range, and sensitivity. A description of new technologies, such as VHSIC and GaAs IC's which are applicable to sensor technology for AO signal processing systems is also presented.

52 citations


Journal ArticleDOI
TL;DR: In this paper, the fabrication of a 1 cm2 (CH)x:Al Schottky photodiode with junction internal conversion efficiency of 0.30% and quantum efficiency approaching unity (hn≳2.8 eV) is reported.
Abstract: The fabrication of a 1‐cm2 (CH)x:Al Schottky photodiode with junction internal conversion efficiency of 0.30% and quantum efficiency approaching unity (hn≳2.8 eV) is reported. Device characteristics are presented. The effect of oxygen contamination is also discussed.

50 citations


Journal ArticleDOI
TL;DR: In this paper, it is argued that unit internal quantum efficiency is achievable in metallurgical junction, oxide•n+n+p•p+p++ photodiodes, if it was achievable in the inversion layer of induced junction diodes of the same type.
Abstract: Mechanisms limiting the internal quantum efficiency in various types of oxide‐passivated silicon photodiodes are discussed. It is argued that unit internal quantum efficiency is achievable in metallurgical junction, oxide‐n+‐p‐p+ photodiodes, if it is achievable in the inversion layer of induced junction diodes of the same type. Measurements of the variation in response of the latter type of photodiode under both oxide bias and reverse bias are described. The results indicate that 100% collection of the minority carriers generated in the inversion layer is achieved for sufficiently low flux levels. Implantation in the oxide of Na+ ions to augment the trapped positive charge increases the maximum flux level at which 100% collection is observed.

50 citations


Journal ArticleDOI
TL;DR: In this paper, a Ga 0.47 In 0.53 As/InP heterostructure was used to produce a photodiode (area = 3 \times 10^{-4} cm2) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C.
Abstract: We have used a Ga 0.47 In 0.53 As/InP heterostructure to produce a photodiode (area = 3 \times 10^{-4} cm2) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C. At this dark current, these photodiodes have near-unity quantum efficiency at 1.6 μm and show good photoresponse over the 1.0-1.65 \mu m region of the optical spectrum.

Book ChapterDOI
TL;DR: In this paper, the current status of metal-insulator-semiconductor (MIS) technology with particular regard to its application in the field of detection of infrared radiation is reviewed.
Abstract: Publisher Summary This chapter reviews the current status of mercury cadmium telluride, (HgCd)Te, metal–insulator–semiconductor (MIS) technology with particular regard to its application in the field of detection of infrared radiation. The performance of the MIS thermal equilibrium mode detector is seen to be equivalent to that of an open-circuit photodiode. Background limited operation (BLIP) can be achieved although with smaller peak responsivity values than for a photodiode operated at V = 0 in which the MIS diode impedance is determined by the background photon flux and not by thermally generated currents. The detector signal under these BLIP conditions is, however, independent of device quantum efficiency. The dominant redeeming feature of the MIS photodiode as compared to the metallurgically formed photodiode is the relative ease of device fabrication, the absence of processing extremes such as ion implantation, high-temperature annealing, and high-temperature diffusion to form the photosensitive junction, and the degree of control over surface leakage. In effect, the quality of the MIS photodiode is determined almost completely by the properties of the substrate material.

Journal ArticleDOI
Abstract: We describe the fabrication and characteristics of a small‐area (diameter ≃20 μm) InP/InGaAs heterojunction phototransistor, a promising photodetector/preamplifier for long‐wavelength optical receivers. The high sensitivity (hfe ≃100 at 20‐nW incident power) and small junction capacitance (≲0.2 pF) of the device combine to produce a gain‐bandwidth product in excess of 1.7 GHz.

Journal ArticleDOI
TL;DR: In this article, a monolithic wavelength converter was constructed in the GaAlAs alloy system which comprises a wide gap emitter phototransistor and a double heterojunction (DH) light emitting diode (LED) in a bifacial configuration.
Abstract: A monolithic wavelength converter has been constructed in the GaAlAs alloy system which comprises a wide gap emitter phototransistor and a double heterojunction (DH) light emitting diode (LED) in a bifacial configuration. The liquid phase epitaxy (LPE)-grown structure is capable of efficiently converting IR light with λ < 870 nm into the red spectral range in conjunction with optical power amplification.

Journal ArticleDOI
TL;DR: In this article, the authors reported the results of excess-noise and normalised receiver sensitivity measurements for In0.53Ga0.47As/InP avalanche photodiodes for use in the λ=0.95 μm to 1.65 μm spectral region.
Abstract: We report the results of excess-noise and normalised receiver sensitivity measurements for In0.53Ga0.47As/InP avalanche photodiodes for use in the λ=0.95 μm to 1.65 μm spectral region. The excess-noise measurements are consistent with a hole-to-electron ionisation rate ratio in InP of ∼ 0.4. The receiver sensitivity, measured at 45 Mbit/s and 10−9 bit-error-rate, was −53.2 dBm at a gain of 20 assuming unity quantum efficiency for the detector. This sensitivity is the highest reported at λ=1.3 μm and represents an improvement over a PIN detector using the same amplifier.

Journal ArticleDOI
TL;DR: In this paper, back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system with InP substrates are presented.
Abstract: We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system which, with InP substrates, can provide photodetectors to cover the wavelength range of 0.93-1.65 \mu m. LPE layer growth and material purification techniques are described, as well as the fabrication and characterization of p-i-n photodiodes made from these compounds. The relevant device parameters and their optimization are discussed, and the performance of high-bit-rate optical receivers employing the new detectors is noted. Finally, we suggest some areas where further research might lead both to a better understanding of carrier transport in these heterojunction configurations and to improved devices made from them.

Journal ArticleDOI
S.R. Forrest1, I. Camlibel, O.K. Kim, H.J. Stocker, J.R. Zuber 
TL;DR: In this paper, high quantum efficiency, high speed, low dark-current In 0.53 Ga 0.47 As/InP p-i-n planar photodiodes which meet the performance requirements of long-wavelength optical communications systems were fabricated.
Abstract: We have fabricated high quantum efficiency, high speed, low dark-current In 0.53 Ga 0.47 As/InP p-i-n planar photodiodes Which meet the performance requirements of long-wavelength optical communications systems. The diodes employ plasma deposited SiN x as a mask to Zn diffusion. The dark-current density at 10 V is J = 5 × 10-5A/cm2with a corresponding capacitance of C = 5 × 10-9F/cm2.

Journal ArticleDOI
TL;DR: A new instrument was conceived and designed for quantitative measurement of chromophoric areas or colored spots such as are produced in thin-layer chromatography, and quantitation of light- absorption substance is accurate and precise for areas of different sizes, shapes, and internal irregularity.
Abstract: A new instrument was conceived and designed for quantitative measurement of chromophoric areas or colored spots such as are produced in (e.g.) thin-layer chromatography. The areas to be measured are subdivided grid-like into small subunits, and the absorbance of each of these is measured. The sum of absorbances for all subunits is directly proportional to the total amount of light-absorbing substances in a spot. The absorbances of the subunits are measured with a photodetector that contains hundreds of microscopically small photodiodes, arranged in a precise geometric array. The photodiode array is interfaced with a computer via an analog-to-digital converter for numerically integrating the individual signals from each photodiode. With this analytical system, quantitation of light-absorbing substance is accurate and precise for areas of different sizes, shapes, and internal irregularity.

Journal ArticleDOI
TL;DR: In this paper, GaSb Schottky barrier photodiodes are shown to have quantum efficiency higher than 35 percent over a broad band of infra-red light wavelength shorter than 1.6 µm.
Abstract: GaSb Schottky barrier photodiodes are shown to have quantum efficiency higher than 35 percent over a broad band of infra-red light wavelength shorter than 1.6 µm. Theoretical calculations of current voltage characteristics including tunneling current are compared with the experiment and it is suggested that surface leakage current, tunneling current, and avalanche breakdown, respectively, dominate the reverse characteristics with increasing voltage. Epitaxial growth of an n-type layer with carrier density 1015cm-3and suitable surface passivation are key technologies for the application of this material to infra-red detectors.

Journal ArticleDOI
TL;DR: A review of the recent work on InP is presented, covering the following properties of this material: bandstructure, electrical transport, lattice dynamics, optical properties, surface properties, thermodynamic properties, and point defects as mentioned in this paper.
Abstract: A review of the recent work on InP is presented, covering the following properties of this material: bandstructure, electrical transport, lattice dynamics, optical properties, surface properties, thermodynamic properties, and point defects. Preparation techniques are discussed, including synthesis and bulk crystal growth, liquid phase epitaxy of InP and Ga(x)In(1-x)P(y)As(1-y), and chemical vapor deposition. Finally, applications of InP in microwave devices, light-emitting diodes and heterostructure lasers, photodiodes, photocathodes, and solar cells are described.

Patent
18 Feb 1981
TL;DR: In this paper, the output power of a transmitter module in an optical fiber transmission system is automatically controlled by a first circuit connected between a temperature sensor and the laser diode in order to regulate the direct current of the laser-diode, and a second circuit connecting between a photodiode and the light-emitting diode (LiD-D) to regulate modulation current.
Abstract: A device for automatically regulating the output power of a transmitter module in an optical-fiber transmission system comprises a first circuit connected between a temperature sensor and the laser diode in order to regulate the direct current of the laser diode, and a second circuit connected between a photodiode and the laser diode in order to regulate the laser-diode modulation current.

Journal ArticleDOI
TL;DR: In this paper, a qualitative multielemental inductively coupled plasma atomic spectra of C, H, N, and O is presented using a low dispersion, near infrared and red photodiode array spectrometer.
Abstract: Preliminary qualitative multielemental inductively coupled plasma atomic spectra of C, H, N, and O are presented using a low dispersion, near infrared and red photodiode array spectrometer. Simple spectra of reasonable intensity are obtained with short (4 ms) integration times. Sensitivity and dispersion considerations are sharply contrasted with those conventionally associated with ultraviolet photodiode array spectra of metals in the inductively coupled plasma.

Journal ArticleDOI
R.F. Leheny1, R. Nahory, M. Pollack, E. Beebe, J. DeWinter 
TL;DR: In this paper, the preparation and properties of grown p-n homojunction In 0.53 Ga 0.47 As photodiodes for operation in the 1-1.7 \mu m wavelength range are described.
Abstract: The preparation and properties of grown p-n homojunction In 0.53 Ga 0.47 As photodiodes for operation in the 1-1.7 \mu m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as 2 \times 10^{-9} A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.

Journal ArticleDOI
TL;DR: An organic color sensor was fabricated by using p and n-type dyes as mentioned in this paper, which has a layered structure of Zn0/merocyanine/rhodamine B. The spectral sensitivity of the cell was changed remarkably by bias voltage, and a good separation of the spectral responses was obtained in the visible spectrum region.
Abstract: An organic color sensor was fabricated by using p‐ and n‐type dyes. The cell has a layered structure of Zn0/merocyanine/rhodamine B, which acts as an n‐p‐n‐ photodiode. The spectral sensitivity of the cell was changed remarkably by bias voltage, and a good separation of the spectral responses was obtained in the visible‐spectrum region.

Journal ArticleDOI
TL;DR: In this paper, the authors proposed the triggered-avalanche detector (TAD) which is a solid-state analog of the Geiger counter, and can be used to detect individual visible and infrared photons.
Abstract: In a suitably cooled and biased semiconductor diode, individual photoevents will trigger avalanche discharges which can be detected and quenched by external circuitry. The resulting triggered‐avalanche detector (TAD) is a solid‐state analog of the Geiger counter, and can be used to detect individual visible and infrared photons. TAD operation in commercially available silicon avalanche photodiodes was found to be limited by carrier‐trapping effects to a noise‐equivalent power (NEP) of 7×10−16 WHz−1/2 for continuous signals at 0.8‐μm wavelength, but can achieve 7×10−18 WHz−1/2 for optimally pulsed signals. Interfering avalanches triggered by trapped carriers have been used to investigate exactly those traps which affect TAD operation in a given diode structure and material. Substantial NEP improvement is possible in diodes optimized for TAD operation. The usual requirement for disparate carrier ionization rates in avalanche diode materials does not apply to TAD operation, and a wide range of narrow‐band‐gap materials can be considered for infrared photon‐counting detectors.

Journal ArticleDOI
TL;DR: The GaAs FET optical detector complements the performance of available P-I-N and avalanche photodiode photodetectors for communications by providing high photoresponse at low bias voltages.
Abstract: The photoresponse of GaAs field effect transistor (FET) optical detectors to optical intensity modulation signals of moderate frequency is investigated. High ac responsivity is available at frequencies of interest in optical communications: more than 6 A/W can be obtained up to 100 MHz, with a noise equivalent power of <10(-12) W/ radicalHz. The slope of the frequency response is dependent on the otpical bias power, an effect that can be attributed to traps. The GaAs FET optical detector complements the performance of available P-I-N and avalanche photodiode photodetectors for communications by providing high photoresponse at low bias voltages.

Journal ArticleDOI
TL;DR: In this article, the authors measured trap energy, concentration, and electron and hole capture cross sections using deep level transient spectroscopy (DLTS) for several samples of Hg1−xCdxTe doped p type by mercury vacancies.
Abstract: Trapping parameters measured by deep level transient spectroscopy (DLTS) for several samples of Hg1−xCdxTe doped p type by mercury vacancies have been correlated with photodiode characteristics. The samples are Hg1−xCdxTe with x values of 0.215, 0.305, and 0.320. The DLTS measured parameters are trap energy, concentration, and electron and hole capture cross sections. These parameters are used to calculate minority carrier lifetime and generation‐recombination noise current. DLTS has identified Shockley‐Read recombination centers which determines the carrier lifetime of p‐type Hg1−xCdxTe photodiodes and the resistance‐area product detectivity figure of merit.

Patent
28 Oct 1981
TL;DR: A phototransistor which is capable of operating alternately in the emission mode and in the reception mode can be coupled under favorable conditions to an optical fiber in a telecommunications system as discussed by the authors.
Abstract: A phototransistor which is capable of operating alternately in the emission mode and in the reception mode can be coupled under favorable conditions to an optical fiber in a telecommunications system. An active layer constitutes the base of the transistor and forms a heterojunction with two layers of opposite conductivity type which constitute the emitter and collector of the transistor. The base contact is formed by a heavily doped region of the same conductivity type as the active layer and defines the useful zone of photon coupling between the optoelectronic component and the entrance face or exit face of the optical fiber.

Journal ArticleDOI
TL;DR: In this paper, the results obtained when a laser microprobe is adapted to imaging detectors for multi-wavelength detection are described, and data are presented to illustrate how the combined system can be used to monitor both surface and depth profiles of elemental content of a variety of sample types.

Journal ArticleDOI
G.H. Olsen1
TL;DR: In this article, high quality InGaAs vapor-grown photodetectors for the 1.0-1.7 µm spectral region with a 100 µm diameter active area, ∼10-30 nA leakage current, 65-75 V breakdown voltage, 60-80% quantum efficiency, < 0.5 ns pulse rise time, < 1 pW/Hz1/2noise equivalent power and stable leakage current at 60°C for over 4000 hours are described.
Abstract: High-quality InGaAs vapor-grown photodetectors for the 1.0-1.7 µm spectral region with a 100 µm diameter active area, ∼10-30 nA leakage current, 65-75 V breakdown voltage, 60-80% quantum efficiency, < 0.5 ns pulse rise time, < 1 pW/Hz1/2noise equivalent power and stable leakage current at 60°C for over 4000 hours are described.