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Photodiode
About: Photodiode is a research topic. Over the lifetime, 28653 publications have been published within this topic receiving 329841 citations.
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TL;DR: In this article, the authors reported the fabrication and application of hybrid bulk heterojunction photodiodes containing PbS nanocrystalline quantum dots as sensitizers for near-infrared detection up to 1.8 µm.
Abstract: Solution-processed photodiodes with infrared sensitivities at wavelengths beyond the bandgap of silicon (corresponding to a wavelength of ∼1,100 nm) would be a significant advance towards cost-effective imaging. Colloidal quantum dots are highly suitable as infrared absorbers for photodetection, but high quantum yields have only been reported with photoconductors1,2,3. For imaging, photodiodes are required to ensure low-power operation and compatibility to active matrix backplanes4. Organic bulk heterojunctions5 are attractive as solution-processable diodes, but are limited to use in the visible spectrum. Here, we report the fabrication and application of hybrid bulk heterojunction photodiodes containing PbS nanocrystalline quantum dots as sensitizers for near-infrared detection up to 1.8 µm, with rectification ratios of ∼6,000, minimum lifetimes of one year and external quantum efficiencies of up to 51%. By integration of the solution-processed devices on amorphous silicon active matrix backplanes, we demonstrate for the first time near-infrared imaging with organic/inorganic hybrid photodiodes. Near-infrared imaging with solution-processed organic–inorganic hybrid photodiodes is demonstrated for the first time. The hybrid bulk-heterojunction photodiodes contain PbS nanocrystalline quantum dots as sensitizers for the detection of light of up to 1.8 µm in wavelength, have a minimum lifetime of one year, and external quantum efficiencies of up to 51%.
597 citations
TL;DR: The performance of ZnO-based photodetectors is analyzed, discussing recent achievements, and comparing the characteristics of the variousPhotodetector structures developed to date.
Abstract: Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.
558 citations
Book•
01 Jan 1996
TL;DR: In this article, the authors present a survey of optical detection processes and their performance in terms of probability and statistics for optical detection, including photovoltaic detectors, infrared search systems and thermal detectors.
Abstract: Partial table of contents: Geometrical Optics. Radiometry. Optical--Detection Processes. Probability and Statistics for Optical Detection. Figures of Merit for Optical Detectors. Photovoltaic Detectors. Thermal Detectors. Schottky--Barrier Photodiodes. Infrared Search Systems. Modulation Transfer Function. Thermal--Imager Systems. Appendices. Index.
542 citations
TL;DR: In this article, the quantum well self-electrooptic effect devices with a CW laser diode as the light source were shown to have bistability at room temperature with 18 nW of incident power, or with 30 ns switching time at 1.6 mW with a reciprocal relation between switching power and speed.
Abstract: We report extended experimental and theoretical results for the quantum well self-electrooptic effect devices. Four modes of operation are demonstrated: 1) optical bistability, 2) electrical bistability, 3) simultaneous optical and electronic self-oscillation, and 4) self-linearized modulation and optical level shifting. All of these can be observed at room-temperature with a CW laser diode as the light source. Bistability can be observed with 18 nW of incident power, or with 30 ns switching time at 1.6 mW with a reciprocal relation between switching power and speed. We also now report bistability with low electrical bias voltages (e.g., 2 V) using a constant current load. Negative resistance self-oscillation is observed with an inductive load; this imposes a self-modulation on the transmitted optical beam. With current bias, self-linearized modulation is obtained, with absorbed optical power linearly proportional to current. This is extended to demonstrate light-by-light modulation and incoherent-to-incoherent conversion using a separate photodiode. The nature of the optoelectronic feedback underlying the operation of the devices is discussed, and the physical mechanisms which give rise to the very low optical switching energy (∼4 fJ/ μm2) are discussed.
533 citations
TL;DR: Graphene/Si heterojunctions are found to be excellent weak-signal detectors with photovoltage responsivity exceeding 10(7) V/W and with noise-equivalent-power reaching ∼1 pW/Hz(1/2), potentially capable of distinguishing materials with transmittance.
Abstract: We present the photodetection properties of graphene/Si heterojunctions both in the photocurrent and photovoltage modes. Monolayer graphene/Si junctions were found to be excellent weak-signal detectors with photovoltage responsivity exceeding 107 V/W and with noise-equivalent-power reaching ∼1 pW/Hz1/2, potentially capable of distinguishing materials with transmittance, T = 0.9995 in a 0.5 s integration time. In the photocurrent mode, the response was found to remain linear over at least six decades of incident power (P), with tunable responsivity up to 435 mA/W (corresponding to incident photon conversion efficiency (IPCE) > 65%) obtained by layer thickening and doping. With millisecond-scale responses and ON/OFF ratios exceeding 104, these photodiodes are highly suitable for tunable and scalable broadband (400 < λ < 900 nm) photodetectors, photometers, and millisecond-response switching, spectroscopic and imaging devices, and further, and are architecturally compatible with on-chip low-power optoelectro...
532 citations