Photodiode

About: Photodiode is a research topic. Over the lifetime, 28653 publications have been published within this topic receiving 329841 citations.

Supporting Online Material for Extremely Efficient Multiple Electron-Hole Pair Generation in Carbon Nanotube Photodiodes

Abstract: Efficient Carbon Nanotube Photodiodes A single photon absorbed in a single-walled carbon nanotube device can generate multiple unbound particles carrying an electric charge. Gabor et al. (p. 1367) report that in such a device at low temperatures, excitation with light of increasing energy leads to well-defined stepwise increases in current. Interestingly, because of the unique band structure of carbon nanotubes, this behavior is analogous to particle-antiparticle creation commonly observed in high-energy particle physics. These observations point to the promise of investigations in other nanoscale carbon systems, such as graphene, and could lead to numerous applications, including highly sensitive photon detection and ultra-efficient photovoltaics. The decay of photoexcited electrons in a carbon nanotube device creates multiple pairs of charge carriers. We observed highly efficient generation of electron-hole pairs due to impact excitation in single-walled carbon nanotube p-n junction photodiodes. Optical excitation into the second electronic subband E22 leads to striking photocurrent steps in the device I-VSD characteristics that occur at voltage intervals of the band-gap energy EGAP/e. Spatially and spectrally resolved photocurrent combined with temperature-dependent studies suggest that these steps result from efficient generation of multiple electron-hole pairs from a single hot E22 carrier. This process is both of fundamental interest and relevant for applications in future ultra-efficient photovoltaic devices.

System for reading two-dimensional images using ambient and/or projected light

Abstract: A system for reading a two-dimensional image, and for comparing the two-dimensional image to stored data representative of a known image. The optical scanning device comprises a sensor for capturing the two-dimensional image, which sensor includes a light source for projecting an emitted light towards the two-dimensional image and an optical assembly for focussing light, which may be ambient and or emitted light from the light source, reflected from the framed two-dimensional image onto a CMOS or CCD detector for detecting the focussed light, the detector including a photodiode array for sensing the focussed light and generating a signal therefrom. Aiming of the sensor to read the two-dimensional image is facilitated by a frame locator consisting of a laser diode which emits a beam that is modified by optics, including diffractive optics, to divide the beam into beamlets which having a spacing therebetween that expands to match the dimensions of the field of view of the sensor, forming points of light at the target to define the edges of the field of view.

Active pixel sensor integrated with a pinned photodiode

Abstract: The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology

Abstract: A novel Monolithic Active Pixel Sensor (MAPS) for charged particle tracking made in a standard CMOS technology is proposed. The sensor is a photodiode, which is readily available in a CMOS technology. The diode has a special structure, which allows the high detection efficiency required for tracking applications. The partially depleted thin epitaxial silicon layer is used as a sensitive detector volume. Semiconductor device simulation, using either ToSCA based or 3-D ISE-TCAD software packages shows that the charge collection is efficient, reasonably fast (order of 100 ns), and the charge spreading limited to a few pixels only. A first prototype has been designed, fabricated and tested. It is made of four arrays each containing 64×64 pixels, with a readout pitch of 20 μm in both directions. The device is fabricated using standard submicron 0.6 μm CMOS process, which features twin-tub implanted in a p-type epitaxial layer, a characteristic common to many modern CMOS VLSI processes. Extensive tests made with soft X-ray source ( 55 Fe) and minimum ionising particles (15 GeV/ c pions) fully demonstrate the predicted performances, with the individual pixel noise (ENC) below 20 electrons and the Signal-to-Noise ratio for both 5.9 keV X-rays and Minimum Ionising Particles (MIP) of the order of 30. This novel device opens new perspectives in high-precision vertex detectors in Particle Physics experiments, as well as in other application, like low-energy beta particle imaging, visible light single photon imaging (using the Hybrid Photon Detector approach) and high-precision slow neutron imaging.

Filterless narrowband visible photodetectors

Abstract: Wavelength-selective light detection is crucial for many applications, including imaging and machine vision. Narrowband spectral responses are required for colour discrimination, and current systems use broadband photodiodes combined with optical filters. This approach increases the architectural complexity and limits the quality of colour sensing. Here we report a method for tuning the spectral response to give filterless, narrowband red, green and blue photodiodes. The devices have simple planar junction architectures with the photoactive layer being a solution-processed mixture of either an organohalide perovskite or lead halide semiconductor and an organic (macro)molecule. The organic (macro)molecules modify the optical and electrical properties of the photodiode and facilitate charge collection narrowing of the device's external quantum efficiency. These red, green and blue photodiodes all possess full-width at half-maxima of <100 nm and performance metrics suitable for many imaging applications. Photodiodes with an intrinsic narrow spectral response make it possible to discriminate between red, green and blue light without the need for any optical filters.