Topic
Photoemission spectroscopy
About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.
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80 citations
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TL;DR: A well-defined silicon oxide/silicon interface was synthesized by the reaction of the precursor cluster H 8 Si 8 O 12 with a Si(100) surface and characterized using Si 2p core level photoemission spectroscopy.
Abstract: A well-defined silicon oxide/silicon interface was synthesized by the reaction of the precursor cluster H 8 Si 8 O 12 with a Si(100) surface and characterized using Si 2p core level photoemission spectroscopy. Information gained regarding the assignments of silicon oxide group shifts and peak widths is used to evaluate assumptions and assignments of photoemission spectra of silicon oxide interfaces
80 citations
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TL;DR: In this paper, a slot-plane-antenna (SPA) high density radical oxidation was used to grow a metal-oxide-semiconductor (Al2O3) gate stack with a GeO2 interfacial layer.
Abstract: GeO2 was grown by a slot-plane-antenna (SPA) high density radical oxidation, and the oxidation kinetics of radical oxidation GeO2 was examined. By the SPA radical oxidation, no substrate orientation dependence of growth rate attributed to highly reactive oxygen radicals with low oxidation activation energy was demonstrated, which is highly beneficial to three-dimensional structure devices, such as multigate field-effect transistors, to form conformal gate dielectrics. The electrical properties of an aluminum oxide (Al2O3) metal-oxide-semiconductor gate stack with a GeO2 interfacial layer were investigated, showing very low interface state density (Dit), 1.4×1011 cm−2 eV−1. By synchrotron radiation photoemission spectroscopy, the conduction and the valence band offsets of GeO2 with respect to Ge were estimated to be 1.2±0.3 and 3.6±0.1 eV, which are sufficiently high to suppress gate leakage.
80 citations
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TL;DR: In this article, the distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy, where negatively charged species containing F at the interface were thought to be responsible for the high barrier Gaussian components.
Abstract: The distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy. For samples on which an aqueous HF pretreatment of the Si substrate was applied, the histogram contains several high barrier Gaussian distribution components. After a short rinse, in de-ionized water or methanol, it was mainly the most important lower Gaussian component which was left. Using additional x-ray photoemission spectroscopy and atomic force microscopy measurements allowed us to propose a model, wherein negatively charged species containing F at the interface, are thought to be responsible for the high barrier Gaussian components.
80 citations
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TL;DR: In this article, a combined spectroscopic investigation of transition metal phthalocyanines (TMPc) has been carried out using electron energy-loss spectroscopy and photo-emission spectrographs.
80 citations