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Photoemission spectroscopy

About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.


Papers
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Journal ArticleDOI
TL;DR: In this article, the effects of surface chemical treatments and metal deposition on the InN surface were studied via synchrotron-based photoemission spectroscopy, showing that the surface Fermi level lies at or above the conduction band maximum when a value of InN band gap of 0.7-0.9 eV is assumed.
Abstract: The effects of surface chemical treatments and metal deposition on the InN surface are studied via synchrotron-based photoemission spectroscopy. Changes in the In 4d core level as well as the valence band spectra are reported. The surface Fermi level position, EF, relative to the valence band maximum was determined for both Au and Ti Schottky barriers. EF lies at an energy of 0.7 eV above the valence band maximum for Au deposited on annealed InN and 1.2 eV above the valence band maximum for Ti deposited on Ar-sputtered InN. These results that the surface Fermi level lays at or above the conduction band maximum when a value of InN band gap of 0.7–0.9 eV is assumed.

77 citations

Journal ArticleDOI
TL;DR: In this article, X-ray absorption spectroscopy (XAS) and x-ray photo-emission (PEG) spectra were performed on VO{sub 2} thin films rf sputtered at various conditions and the spectra give evidence of the changes in the electronic structure depending on the film quality.
Abstract: X-ray absorption spectroscopy (XAS) and x-ray photoemission spectroscopy of the V L edge and O K edge were performed on VO{sub 2} thin films rf sputtered at various conditions. The spectra give evidence of the changes in the electronic structure depending on the film quality. XAS of the O K edge shows a decrease of the spacing between 3d{sub {pi}} and 3d{sub {sigma}} bands by 0.8 eV with concurrent broadening of both bands for the sample sputtered at lower substrate temperature and consequently having more polycrystalline and disordered character. 3d{sub {sigma}} band position appears to be more sensitive to the sample quality, indicating that the cation-ligand interaction is mostly affected likely due to the distortion of the local O coordination surrounding a V ion. The observed variation of the spectra in films of different morphologies may reflect the changes of the density of states responsible for the considerable variation of the metal-insulator transition (MIT) properties reported for VO{sub 2} thin films synthesized at different conditions. The study of the temperature dependence of the XAS spectra including repeated measurements across the MIT revealed both reversible and irreversible V L-edge and O K-edge changes. The thermal cycling of the VO{sub 2} filmsmore » through the MIT shows irreversible shifts of the conduction bands toward lower photon energies apparently caused by the sample deterioration due to the lattice transformations at the MIT. The signature of a phase transition in a VO{sub 2} film at MIT temperature (T{sub MIT}) is clearly seen in the XAS O K-edge spectra which show reversible switches of the 3d{sub {pi}} and 3d{sub {sigma}} bandwidths by approximately 20% depending on the sample being above or below T{sub MIT}.« less

77 citations

Journal ArticleDOI
TL;DR: In this article, the density of the $4f$ states in all metallic rare earths has been studied with bremsstrahlung isochromat spectroscopy (BIS) and x-ray photoemission spectro-camera (XPS).
Abstract: The density of the $4f$ states in all metallic rare earths has been studied with bremsstrahlung isochromat spectroscopy (BIS) and x-ray photoemission spectroscopy (XPS). The final-state multiplet structures of the $4{f}^{14\ensuremath{-}n}$ and $4{f}^{n}$ configurations observed by BIS and XPS, respectively, are closely related. The elements showing interconfiguration fluctuations are found to have one $4f$ level in the immediate vicinity of the Fermi level. Correlation energies are extracted directly from the spectra and compared with recent theoretical calculations.

77 citations

Journal ArticleDOI
TL;DR: In this paper, a tetragonal zircon BiVO4 (P-BiVO4) was grown on fluorine-doped tin oxide (FTO) glass via hydrothermal method.
Abstract: Tetragonal zircon BiVO4 (P-BiVO4) were grown on fluorine-doped tin oxide (FTO) glass via hydrothermal method. The cathodic photocurrent and Mott-Schottky analysis indicate that the tetragonal zircon BiVO4 is a p-type semiconductor. Inductively coupled plasma (ICP) analysis and X-ray photoelectron spectrum showed that there are Bi vacancies and interstitial oxygen exist in the crystal, which are the origin of the p-type conductivity. The flat band potential of the P-BiVO4 is about 1.33 V (vs Ag/AgCl) inferred from Mott-Schottky plots. Combining with diffuse reflection spectrum and valence band X-ray photoelectron spectrum, the calculated conduction band value of the P-BiVO4 is about 0.06 V vs RHE, slightly higher than the reduction potential of hydrogen. However, the P-BiVO4 exhibit hydrogen production activity under Xe light irradiation even though its conduction band level is not negative enough. This can be attributed to the hot carrier processes in p-type semiconductors.

77 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023128
2022262
2021227
2020281
2019247
2018263