Topic
Photoemission spectroscopy
About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.
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TL;DR: In this article, angle-resolved photoemission spectroscopy using synchrotron radiation was used to study CO on Pd(111) by means of angle-resolution spectrographs, and the dispersion of the 4 σ and composite (5σ + 1π) levels has been measured along the high symmetry directions in the Brillouin zone for the ordered c(4 × 2) structure.
65 citations
TL;DR: In this article, a prototypical superlattice composed of a correlated metal LaNiO3 and a doped Mott insulator LaTiO(3+δ) was synthesized, which exhibits interfacial charge transfer from Ti to Ni sites, giving rise to an insulating ground state with orbital polarization and e(g) orbital band splitting.
Abstract: In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO3 have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental understanding of the electronic and orbital states emerging from interfacial charge transfer and their connections to the modified band structure at the interface. Towards this goal, we have synthesized a prototypical superlattice composed of a correlated metal LaNiO3 and a doped Mott insulator LaTiO(3+δ), and investigated its electronic structure by resonant X-ray absorption spectroscopy combined with X-ray photoemission spectroscopy, electrical transport and theory calculations. The heterostructure exhibits interfacial charge transfer from Ti to Ni sites, giving rise to an insulating ground state with orbital polarization and e(g) orbital band splitting. Our findings demonstrate how the control over charge at the interface can be effectively used to create exotic electronic, orbital and spin states.
65 citations
TL;DR: The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier transform infrared spectroscopy (FTIR), x-ray photoemission spectrograph (XPS), Hall effect, and electrochemical capacitance-voltage measurements.
Abstract: The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier-transform infrared spectroscopy (FTIR), x-ray photoemission spectroscopy (XPS), Hall effect, and electrochemical capacitance-voltage measurements. The XPS results were correlated with density functional theory calculation of the partial density of states in the valence-band and semicore levels. Good agreement was found between theory and experiment with a small offset of the Sn 4d levels. Homogeneous Sb-doped SnO2 films allowed for the calculation of the bulk Fermi level with respect to the conduction-band minimum within the k⋅p carrier statistics model. The band bending and carrier concentration as a function of depth were obtained from the capacitance-voltage characteristics and model space charge calculations of the Mott-Schottky plots at the surface of Sb-doped SnO2 films. It was quantitatively demonstrated that SnO2 films have downward band bending and surface electron accumulation. The surface band bending, unoccupied donor surface-state density, and width of the accumulation region all decrease with increasing Sb concentration.
65 citations
TL;DR: In PuSe, which can be classified as a heavy fermion system with low carrier density, three narrow peaks in the valence band can be related to the 5f emission, and these three features are very sensitive to stoichiometry deviations and disappear for PuSe prepared at T = 77 K.
Abstract: Thin layers of PuSb and PuSe were studied by photoelectron spectroscopy. X-ray photoelectron spectroscopy and high-resolution valence-band ultraviolet photoelectron spectroscopy spectra show localization of the 5f states and a low density of states at E(F) in PuSb. In PuSe, which can be classified as a heavy fermion system with low carrier density, we observed three narrow peaks in the valence band, which can be related to the 5f emission. These three features are very sensitive to stoichiometry deviations and disappear for PuSe prepared at T = 77 K.
65 citations
TL;DR: A satellite feature in the O 1s XPS spectrum, often suggested to be a quantitative measure of adsorbed OH, receives a significant contribution from sources not directly related to hydroxylated ITO.
Abstract: The preparation and functionalization of ITO surfaces has been studied using primarily X-ray photoemission spectroscopy and infrared reflection−absorption spectroscopy (IRRAS) and the reagents n-hexylamine and n-octyltrimethoxysilane (OTMS). Particular attention has been paid to characterization of the surfaces both before and after functionalization. Surfaces cleaned by ultraviolet (UV)/ozone treatment and subsequently exposed to room air have ∼0.5−0.8 monolayers (ML) of adsorbed impurity C. Most is in the form of aliphatic species, but as much as one-half is partially oxidized and consists of C−OH, C−O−C, and/or >CO groups. The coverage of these species can be reduced by cleaning in organic solvents prior to UV/ozone treatment. The OH coverage on the ITO surfaces studied here is relatively small (∼1.0 OH nm-2), based on the Si coverage after reaction with OTMS. A satellite feature in the O 1s XPS spectrum, often suggested to be a quantitative measure of adsorbed OH, receives a significant contribution f...
65 citations