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Photoemission spectroscopy

About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.


Papers
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Journal ArticleDOI
TL;DR: In this paper, an analysis of the vibrational fine structure on the main C1s photoelectron line is presented, which indicates that the lifetime broadening is 78 ± 10 meV.

64 citations

Journal ArticleDOI
TL;DR: In this paper, an angle-resolved x-ray photoemission spectroscopy was used to study the structure of oxynitride films under one type of nitridation, with N assuming O sites.
Abstract: Ultrathin nitrided SiO2/Si(001) films were studied using angle-resolved x-ray photoemission spectroscopy. The structure of the oxynitride depended on the nitridation process. Under one type of nitridation the film kept the structure of the SiO2, with N assuming O sites. By taking advantage of the nonuniformity on the chemical depth profile, the Si 2p chemical shift was determined for those Si atoms bonded to three O and one N atom, and for those bonded to two O and two N atoms. The stoichiometry depth profile was recognized through a simple method that allowed the input of physical constrains.

64 citations

Journal ArticleDOI
M. Diani1, A. Mansour1, L. Kubler1, Jean-Luc Bischoff1, D. Bolmont1 
TL;DR: In this paper, the authors used an ultrahigh-vacuum-compatible electron cyclotron resonance plasma source and an in-situ X-ray photoemission spectroscopy (XPS) technique analysis.

64 citations

Journal ArticleDOI
TL;DR: In this article, the influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy.
Abstract: The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.

64 citations

Journal ArticleDOI
TL;DR: Perego et al. as discussed by the authors used high-resolution x-ray photoemission spectroscopy to study the valence and conduction band offsets at GeO2/Ge(001) interface.
Abstract: High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2/Ge(001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego et al., Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas’ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)].

63 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023128
2022262
2021227
2020281
2019247
2018263