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Photoemission spectroscopy

About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the thermal reduction of thin-film molybdenum trioxide under flowing hydrogen or nitrogen gases was studied over the range 350-730 o C. Some of the LRS measurements were made in situ during the reduction reaction using a custom quartz cell reactor.
Abstract: X-ray photoelectron spectroscopy (XPS) and laser Raman spectroscopy (LRS) have been used to examine the thermal reduction products of thin-film molybdenum trioxide under flowing hydrogen or nitrogen gases. Some of the LRS measurements were made in situ during the reduction reaction using a custom quartz cell reactor. Thermal reduction of MoO 3 was studied over the range 350-730 o C.

186 citations

Journal ArticleDOI
TL;DR: In this article, high energy resolution (0.15 eV) along with high brightness level allows us to separate, unambiguously, on both Hf 4f and Si 2p core-level spectra, interfacial Hf-silicate bonds from bulk HfO2 and SiO2 contributions, thus making possible subsequent quantitative treatments and modeling of the interfacial layer structure.
Abstract: X-ray photoelectron spectroscopy using synchrotron radiation has been used to investigate the HfO2/SiO2 interface chemistry of high-quality 0.6 and 2.5 nm HfO2/0.6 nm SiO2/Si structures. The high energy resolution (0.15 eV) along with the high brightness level allows us to separate, unambiguously, on both Hf 4f and Si 2p core-level spectra, interfacial Hf–silicate bonds from bulk HfO2 and SiO2 contributions, thus making possible subsequent quantitative treatments and modeling of the interfacial layer structure. Careful assessment of the energy shift of the interfacial components shows that Si-rich Hf silicates are present. The underlying assumption that initial-state contribution dominates the observed Si 2p shift is briefly discussed.

186 citations

Journal ArticleDOI
31 Jan 2014-ACS Nano
TL;DR: A polymer-free method that can routinely transfer relatively large-area graphene to any substrate with advanced electrical properties and superior atomic and chemical structures as compared to the graphene sheets transferred with conventional polymer-assisted methods is demonstrated.
Abstract: We demonstrate a polymer-free method that can routinely transfer relatively large-area graphene to any substrate with advanced electrical properties and superior atomic and chemical structures as compared to the graphene sheets transferred with conventional polymer-assisted methods. The graphene films that are transferred with polymer-free method show high electrical conductance and excellent optical transmittance. Raman spectroscopy and X-ray/ultraviolet photoelectron spectroscopy also confirm the presence of high quality graphene sheets with little contamination after transfer. Atom-resolved images can be obtained using scanning tunneling microscope on as-transferred graphene sheets without additional cleaning process. The mobility of the polymer-free graphene monolayer is as high as 63 000 cm2 V–1 s–1, which is 50% higher than the similar sample transferred with the conventional method. More importantly, this method allows us to place graphene directly on top of devices made of soft materials, such as ...

186 citations

Journal ArticleDOI
TL;DR: In this paper, a theory of the angular distribution of photoelectrons ejected with a given energy from diatomic molecules is presented, where the differential crosssection σΩ is of the form σ Ω = σ total 4 π [ 1 + β P 2 ( cos Θ ) ] where σtotal is the total cross-section, β an anisotropy parameter and Θ the angle between the polarization vector of the incident light and the direction of the photoelectron.
Abstract: A theory of the angular distribution of photoelectrons ejected with a given energy from diatomic molecules is presented. The differential cross-section σΩ is of the form σ Ω = σ total 4 π [ 1 + β P 2 ( cos Θ ) ] where σtotal is the total cross-section, β an anisotropy parameter and Θ the angle between the polarization vector of the incident light and the direction of the photoelectron. Expressions for σtotal and β in terms of internal transition dipole moments are obtained for transitions between individual rotational states of the molecule and ion, for either of Hund's cases (a) or (b). The formulae have been developed for central-field bases for the eigenstates of die electron before and after ionization. When rotational structure in the photoelectron spectrum is unresolved the angular distribution is independent of the choice of Hund's case.

185 citations

Journal ArticleDOI
TL;DR: In this paper, the change in the chemical surface state of polished Si wafers during storage in air at room temperature was investigated for storage times up to half a year, using x-ray Photoelectron Spectroscopy (XPS) and High Resolution Electron Energy Loss Spectrograph (HREELS).
Abstract: The change in the chemical surface state of polished Si wafers [p‐type, (100) oriented] during storage in air at room temperature was investigated for storage times up to half a year. Measurements were performed by x‐ray Photoelectron Spectroscopy (XPS) and High Resolution Electron Energy Loss Spectroscopy (HREELS). Immediately after the HF treatment (1 min 5% HF, 2 min water rinse) vibrational spectroscopy (HREELS) shows a predominant coverage of the surface with hydride groups (80%–90% of a ML), which can be inferred from the presence of the stretching (2100 cm−1), scissor (900 cm−1) and bending (640 cm−1) vibrations in the spectra. A slight additional coverage with oxygen is proved by XPS and originates from Si‐OH groups (3670 cm−1) and oxygen‐related hydrocarbon groups (XPS). These Si‐OH groups result from an exchange reaction of Si‐F with water during the two‐minute water rinse. The development of an oxygen coverage during subsequent storage in air occurs extremely slowly and shows a logarithmic beha...

185 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023128
2022262
2021227
2020281
2019247
2018263