Photoemission spectroscopy

About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.

Surface-directed spinodal decomposition in poly[3-hexylthiophene] and C₆₁-butyric acid methyl ester blends.

Abstract: Demixed blends of poly[3-hexylthiophene] (P3HT) and C61-butyric acid methyl ester (PCBM) are widely used in photovoltaic diodes (PV) and show excellent quantum efficiency and charge collection properties. We find the empirically optimized literature process conditions give rise to demixing during solvent (chlorobenzene) evaporation by spinodal decomposition. Ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS) results are consistent with the formation of 1−2 nm thick surface layers on both interfaces, which trigger the formation of surface-directed waves emanating from both film surfaces. This observation is evidence that spinodal demixing (leading to a bicontinuous phase morphology) precedes the crystallization of the two components. We propose a model for the interplay of demixing and crystallization which explains the broadly similar PV performance for devices made with the bottom electrodes either as hole or electron collector. The process regime of temporal separati...

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

Abstract: The valence-band density of states of single-crystalline rock-salt CdO(001), wurtzite $c$-plane ZnO, and rock- salt MgO(001) are investigated by high-resolution x-ray photoemission spectroscopy. A classic two-peak structure is observed in the VB-DOS due to the anion $2p$-dominated valence bands. Good agreement is found between the experimental results and quasi-particle-corrected density-functional theory calculations. Occupied shallow semicore $d$ levels are observed in CdO and ZnO. While these exhibit similar spectral features to the calculations, they occur at slightly higher binding energies, determined as 8.8 eV and 7.3 eV below the valence band maximum in CdO and ZnO, respectively. The implications of these on the electronic structure are discussed.

GaN (0001)-(1×1) surfaces: Composition and electronic properties

Abstract: We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined.