Topic
Photoemission spectroscopy
About: Photoemission spectroscopy is a research topic. Over the lifetime, 10821 publications have been published within this topic receiving 250888 citations. The topic is also known as: photoelectron spectroscopy & PES.
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TL;DR: In this article, the Si−3 and Si−4 anions were obtained at 355 and 266 nm, respectively, and the spectra showed transitions to the ground and low-lying excited electronic states of the neutral clusters.
Abstract: Photoelectron spectra of the Si−3 and Si−4 cluster anions have been obtained at 355 and 266 nm. The spectra show transitions to the ground and low‐lying excited electronic states of the neutral clusters. Several of the electronic bands show resolved vibrational structure. The electronic state energies and vibrational frequencies are compared to recent ab initio calculations. The Si−4 spectrum is consistent with the prediction of a planar, symmetric rhombus for the ground state of Si4.
101 citations
TL;DR: In this article, the authors investigated the oxidation of GaN at room temperature using x-ray photo-emission spectroscopy and found that the onset of oxidation is observed at 105 Langmuir (L=10−6/Torr) of oxygen exposure.
Abstract: The oxidation of GaN at room temperature was investigated using x-ray photoemission spectroscopy. The onset of oxidation is observed at 105 Langmuir (L=10−6 Torr s) of oxygen exposure. This is seen both in changes in the percent composition of oxygen and in shifts in the core spectrum of Gallium. The oxidation saturates at an exposure of 108 L. Detailed core level analysis shows that at this exposure most of the surface Ga atoms have been oxidized. The results indicate that the oxidation of GaN is a kinetically limited process restricted to the surface and the underlying bulk is not strongly perturbed. This is in sharp contrast with GaAs where oxidation begins at the same level of exposure and then continues for all further exposures as subsurface layers are oxidized.
101 citations
TL;DR: In this paper, the application of multiple experimental techniques to silicon surface studies is discussed, including the chemisorption of oxygen on silicon at coverages up to one monolayer and the intrinsic surface states on cleaved and on annealed Si (111) surfaces.
101 citations
TL;DR: In this article, an organic p-i-n CuPc homojunction was constructed using F4-TCNQ and decamethylcobaltocene (DMC) as p-and n-dopants.
101 citations
TL;DR: In this paper, the authors present an overview of angle-resolved photoemission spectroscopy (ARPES) studies of high-temperature cuprate superconductors aiming at elucidating the relationship between the superconductivity, the pseudogap, and the Fermi arc.
Abstract: We present an overview of angle-resolved photoemission spectroscopy (ARPES) studies of high-temperature cuprate superconductors aiming at elucidating the relationship between the superconductivity, the pseudogap, and the Fermi arc. ARPES studies of underdoped samples show a momentum dependence of the energy gap below T c which deviates from a simple d -wave form, suggesting the coexistence of multiple energy scales in the superconducting state. Hence, two distinct energy scales have been introduced, namely, the gap near the node (characterized by Δ 0 ) and in the anti-nodal region (characterized by Δ * ). Dichotomy between them has been demonstrated from the material, doping, and temperature dependence of the energy gap. While Δ * at the same doping level is approximately material independent, Δ 0 shows a strong material dependence tracking the magnitude of T cmax . The anti-nodal gap does not close at T c in contrast to the gap near the node which follows something closer to a BCS-like temperature depend...
101 citations