Topic
Photoexcitation
About: Photoexcitation is a research topic. Over the lifetime, 5874 publications have been published within this topic receiving 134733 citations.
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TL;DR: In this paper, photoexcited chemical vapor deposition (CVD) and etching using synchrotron radiation as an exciting light source were experimentally demonstrated, and reaction models for gas phase excitation and surface excitation were proposed.
Abstract: Photoexcited chemical‐vapor deposition (CVD) and etching using synchrotron radiation as an exciting light source were experimentally demonstrated. CVD of silicon nitride film and etching of Si and SiO2 by SF6+O2 gases are described in detail. In several reaction systems, it was found that the surface photoexcitation was an important mechanism. Reaction models for gas‐phase excitation and surface excitation were proposed.
86 citations
TL;DR: In this paper, the relation of the increase and decrease with temperature in the integrated intensity is complementary with each other between the luminescence-band V Cu and the X O -Γ 12 -exciton luminecence over T = 4.2-230 K, and the relative magnitudes of the intensity of the band V O 2+ cross over each other at the vicinity of the energy level of exciton, λ∼610 nm.
Abstract: Variations of optical absorption and especially of photoluminescence spectra of Cu 2 O with photoexcitation wavelength and temperature have been for the first time investigated in details. We have newly observed that the relation of the increase and decrease with temperature in the integrated intensity is complementary with each other between the luminescence-band V Cu and the X O -Γ 12 - exciton luminescence over T =4.2–230 K, and the relative magnitudes of the intensity of the band V Cu and V O 2+ cross over each other at the vicinity of the energy level of exciton, λ∼610 nm. We recognize the evidences of the recombination processes of the excitons coupled with vacancies levels. These phenomena indicate universal natures even among the different quality of specimens. Thus, we request a consideration based on the many-body aspect.
86 citations
TL;DR: Radiative recombination in single crystals and glasses of arsenic sulphide and selenide under photoexcitation was observed in this article, where the recombination was performed in a single crystal and a single glass.
Abstract: Radiative recombination in single crystals and glasses of arsenic sulphide and selenide under photoexcitation is observed
85 citations
TL;DR: The charge-separated state has a lifetime of 310 micros in benzonitrile at 278 K, which is the longest lifetime in solution ever reported for electron donor-acceptor-linked dyads.
85 citations
TL;DR: In this article, a systematic study of low-temperature-grown GaAs, as-grown and annealed, reveal carrier lifetimes to be directly related to the excess arsenic incorporation and the anneal conditions.
Abstract: Subpicosecond electron lifetimes in low-temperature-grown GaAs are unambiguously demonstrated via far infrared terahertz spectroscopy. A systematic study of low-temperature-grown GaAs, as-grown and annealed, reveal carrier lifetimes to be directly related to the excess arsenic incorporation and anneal conditions. Contrary to previous observations, electron lifetimes of 600 fs (200 fs) are found in 0.25% (0.5%) excess arsenic GaAs. We attribute the observed differences to the far infrared interaction and the use of dilute photoexcitation densities which eliminate both band-edge resonance and high carrier densities effects. A simple model is developed to determine the relative electron mobility and to interpret the results. Additionally, time resolved differential spectroscopy reveals Drude-like behavior of the free carrier conductivity within 1 ps of excitation.
85 citations