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Photoexcitation

About: Photoexcitation is a research topic. Over the lifetime, 5874 publications have been published within this topic receiving 134733 citations.


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TL;DR: This work used spectroelectrochemistry and ultrafast spectroscopy to demonstrate that upon photoexcitation in NH2 -MIL-125(Ti) the electron is located in the Ti-oxo clusters and the hole resides on the aminoterephthalate unit, specifically on the amino group.
Abstract: Recently, MIL-125(Ti) and NH2 -MIL-125(Ti), two titanium-based metal-organic frameworks, have attracted significant research attention in the field of photocatalysis for solar fuel generation. This work reveals that the differences between these structures are not only based on their light absorption range but also on the decay profile and topography of their excited states. In contrast to MIL-125(Ti), NH2 -MIL-125(Ti) shows markedly longer lifetimes of the charge-separated state, which improves photoconversion by the suppression of competing decay mechanisms. We used spectroelectrochemistry and ultrafast spectroscopy to demonstrate that upon photoexcitation in NH2 -MIL-125(Ti) the electron is located in the Ti-oxo clusters and the hole resides on the aminoterephthalate unit, specifically on the amino group. The results highlight the role of the amino group in NH2 -MIL-125(Ti), the electron donation of which extends the lifetime of the photoexcited state substantially.

74 citations

Journal ArticleDOI
TL;DR: This work presents a time and energy resolved transient absorption spectroscopy study on the kinetics of photogenerated charge carriers, focusing on 0-5 ps after photoexcitation, and finds that carriers diffuse from higher to lower energy sites in the quantum-dot solid within several picoseconds.
Abstract: PbSe quantum-dot solids are of great interest for low cost and efficient photodetectors and solar cells. We have prepared PbSe quantum-dot solids with high charge carrier mobilities using layer-by-layer dip-coating with 1,2-ethanediamine as substitute capping ligands. Here we present a time and energy resolved transient absorption spectroscopy study on the kinetics of photogenerated charge carriers, focusing on 0–5 ps after photoexcitation. We compare the observed carrier kinetics to those for quantum dots in dispersion and show that the intraband carrier cooling is significantly faster in quantum-dot solids. In addition we find that carriers diffuse from higher to lower energy sites in the quantum-dot solid within several picoseconds.

74 citations

Journal ArticleDOI
Vasili Perebeinos1, Phaedon Avouris1
TL;DR: In this paper, the authors investigate theoretically the efficiency of intramolecular hot-carrier-induced impact ionization and excitation processes in carbon nanotubes and show that strong excitonic coupling favors neutral excitations over ionization, while the impact mechanism populates a different set of states than that produced by photoexcitation.
Abstract: We investigate theoretically the efficiency of intramolecular hot-carrier-induced impact ionization and excitation processes in carbon nanotubes. The electron confinement and reduced screening lead to drastically enhanced excitation efficiencies over those in bulk materials. Strong excitonic coupling favors neutral excitations over ionization, while the impact mechanism populates a different set of states than that produced by photoexcitation. The excitation rate is strongly affected by optical phonon excitation and a simple scaling of the rate with the field strength and optical phonon temperature is obtained.

74 citations

Journal ArticleDOI
TL;DR: In this article, the photoluminescence (PL) characteristics of pure nanoscale silicon quantum wires (SiQW's) were evaluated under ultraviolet photoexcitation.
Abstract: The recent success of bulk synthesis of pure nanoscale silicon quantum wires (SiQW's) enables us to evaluate their photoluminescence (PL) characteristics under ultraviolet photoexcitation. Intensive multiple light emissions ranging from dark red to blue regions were revealed for as-grown and partially oxidized SiQW samples. The red light emission was ascribed to a quantum confinement effect originating from the crystalline core of the SiQW's that is closely mediated by the interface. However, the PL emission from green to blue is found to be definitely unrelated to quantum confinement; instead they are attributed to the radiative recombination from defect centers in the overcoating layer of the amorphous silicon oxide outside the SiQW's.

73 citations

Journal ArticleDOI
TL;DR: The potential of dimethylsilylene and isopropylidene U-spacers as bridges for photoinduced charge transfer (CT) in 4-cyano-4'-dimethylamino)- and 4-cyclo-methoxy-substituted diphenyldimethylsilanes and 2,2-diphen- ylpropanes was studied in this article.
Abstract: The potential of dimethylsilylene and isopropylidene U-spacers as bridges for photoinduced charge transfer (CT) in 4-cyano-4'-(dimethylamino)- and 4-cyano-4'-methoxy-substituted diphenyldimethylsilanes and 2,2-diphen- ylpropanes was studied. Fluorescence solvatochromism and time-resolved microwave conductivity measurements show that upon photoexcitation a charge separated state (D ¥+ UA ¥- )* is populated in all compounds. Excited state dipole moments for a given donor-acceptor combination are, irrespective of the bridge, equal. The CT states of the silanes are however lying at lower energies, implying that the presence of silicon thermodynamically facilitates the CT process. Cyclic voltammetry data of model compounds show that this is a consequence of the lowering of the acceptor reduction potential by the silicon bridge. It was however inferred from radiative decay rates that the electronic coupling between the CT and locally excited states as well as the coupling between the ground and CT state is larger for the carbon-bridged compounds. As shown by both solution and solid state electronic spectra and radiative decay rates, the photophysics of the DUA compounds are dominated by intensity borrowing of the CT transitions from transitions localized in the DU and UA chromophores.

73 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023249
2022529
2021221
2020204
2019183
2018256