About: Photomask is a(n) research topic. Over the lifetime, 7917 publication(s) have been published within this topic receiving 54524 citation(s). The topic is also known as: photoreticle & reticle.
Papers published on a yearly basis
••25 Jun 1999
TL;DR: In this article, a template is created on a standard mask blank by using the patterned chromium as an etch mask to produce high-resolution relief images in the quartz.
Abstract: An alternative approach to lithography is being developed based on a dual-layer imprint scheme. This process has the potential to become a high-throughput means of producing high aspect ratio, high-resolution patterns without projection optics. In this process, a template is created on a standard mask blank by using the patterned chromium as an etch mask to produce high-resolution relief images in the quartz. The etched template and a substrate that has been coated with an organic planarization layer are brought into close proximity. A low-viscosity, photopolymerizable formulation containing organosilicon precursors is introduced into the gap between the two surfaces. The template is then brought into contact with the substrate. The solution that is trapped in the relief structures of the template is photopolymerized by exposure through the backside of the quartz template. The template is separated from the substrate, leaving a UV-curved replica of the relief structure on the planarization layer. Features smaller than 60 nm in size have been reliably produced using this imprinting process. The resolution silicon polymer images are transferred through the planarization layer by anisotropic oxygen reactive ion etching. This paper provides a progress report on our efforts to evaluate the potential of this process.
••09 Jul 2007
TL;DR: A glossary of manufacturing terms acronyms used in semiconductor manufacturing standards and specifications units of measure and conversion tables useful constants can be found in this paper, along with a detailed overview of process control in-line metrology in-situ metrology yield modelling yield management electrical, physical and chemical characterization failure analysis.
Abstract: Overview of semiconductor devices introduction to semiconductor equipment silicon materials surface preparation ion implantation dopant diffusion oxidation silicidation rapid thermal processing overview of interconnect chemical vapourdeposition alternate interlevel dielectrics polymide dielectrics physical vapour deposition chemical-mechanical polish optical lithography photoresist materials and processing x-ray lithography electron-beam lithography photomask fabrication plasma etching equipment reliability overview of process control in-line metrology in-situ metrology yield modelling yield management electrical, physical and chemical characterization failure analysis. Appendices: glossary of manufacturing terms acronyms used in semiconductor manufacturing standards and specifications units of measure and conversion tables useful constants.
29 Jun 2007
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Abstract: An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film
TL;DR: In this paper, the SU-8 50 negative photoresist (PR) was used for fabricating ultra-thick microfluidic devices using standard UV lithography.
Abstract: In this paper we describe a new process for fabricating ultra-thick microfluidic devices utilizing SU-8 50 negative photoresist (PR) by standard UV lithography. Instead of using a conventional spin coater, a simple 'constant-volume-injection' method is used to create a thick SU-8 PR film up to 1.5 mm with a single coating. The SU-8 PR is self-planarized during the modified soft-baking process and forms a highly-uniform surface without any edge bead effect, which commonly occurs while using a spin coater. Photomasks can be in close contact with the PR and a better lithographic image can be generated. Experimental data show that the average thickness is 494.32 ± 17.13 μm for a 500 μm thick film (n = 7) and the uniformity is less than 3.1% over a 10 × 10 cm2 area. In this study, the temperatures for the soft-baking process and post-exposure baking are 120 °C and 60 °C, respectively. These proved to be capable of reducing the processing time and of obtaining a better pattern definition of the SU-8 structures. We also report on an innovative photomask design for fabricating ultra-deep trenches, which prevents the structures from cracking and distorting during developing and hard-baking processes. In this paper, two microfluidic structures have been demonstrated using the developed novel methods, including a micronozzle for thruster applications and a microfluidic device with micropost arrays for bioanalytical applications.
•24 Feb 1998
TL;DR: In this paper, an improved technique for inspecting photomasks employs simulated images of the resist pattern, compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern.
Abstract: An improved technique for inspecting photomasks employs simulated images of the resist pattern. A simulated image of an original pattern is compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern. Alternatively, simulated images generated from captured data from two different instances of the same original pattern formed in a photomask are compared.
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