Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

Method and apparatus for the etching of photomask substrates using pulsed plasma

Abstract: Disclosed is a method and apparatus for the etching of a thin film upon a photomask (24) . The etching is carried out in a reactor (20) via an inductively coupled pulsed plasma. Pulsing of the plasma is achieved by regulating the time period (or duty cycle) in which the plasma is generated. It has been found that by decreasing the duty cycle, high etch selectively can be achieved and feature sizes can be faithfully maintained.

Photomask and its production

Abstract: PROBLEM TO BE SOLVED: To from a fine hole pattern with good accuracy without dimensional variance by providing a circular mask pattern to form a fine hole pattern by exposure. SOLUTION: First, a positive resist 3 is applied on a mask substrate 1a. A resist pattern 4 is formed in the resist 3 on the mask substrate 1a by partial full-plate exposure. In the partial full-plate exposure, the circular pattern 8 (negative pattern) formed in the aperture 7 is irradiated with an electron beam 6 emitted for an electron gun 5. The electron beam shaped according to the circular pattern 8 is reduced by a reduction lens 9 and the specified position of the resist 3 on the mask substrate 1a is irradiated with the electron beam by a deflector 10. Then the resist 3 is etched by dry etching or wet etching to form a circular mask pattern on the mask substrate 1a to obtain a negative photomask. COPYRIGHT: (C)2000,JPO

Reflection photomask having capping layer and its manufacturing method

Abstract: PROBLEM TO BE SOLVED: To provide a reflection photomask which prevents damages to the surface of a reflective layer in a manufacturing process without complicating the manufacturing process, and prevents adhesion of dirt to the surface of the reflective layer in an exposing process without lowering reflectance, and provide its manufacturing method. SOLUTION: The reflection photomask consists of; a substrate consisting such as of silicon and glass; the reflective layer formed on the substrate and consisting of a multilayer wherein molybdenum and silicon are alternately stacked; an absorber pattern of a given shape, which is formed on the reflective layer and consists of such materials as tantalum nitride capable of absorbing EUV; and a capping layer comprising Ru, etc., which is formed throughout the substrate having the absorber pattern. COPYRIGHT: (C)2004,JPO

Inspection method and photomask

Abstract: An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.