scispace - formally typeset
Search or ask a question
Topic

Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
More filters
Proceedings ArticleDOI
TL;DR: In this paper, the authors explore the unique challenges IC metrology faces to enable double patterning, first in development, then in production, in order to extend water immersion lithography further.
Abstract: Double patterning has emerged as a likely lithography technology to bridge the gap between water-based ArF immersion lithography and EUV. Water immersion, single exposure lithography is limited to about 40nm half pitch with NA 1.35. Extension of immersion with high index fluids and glasses is theoretically possible, but faces severe challenges in technology, economics, and timing. In order to extend water immersion lithography further, much attention is given to reducing effective k1 to less than 0.25 using double patterning. This paper explores the unique challenges IC metrology faces to enable double patterning, first in development, then in production.

20 citations

Proceedings ArticleDOI
21 Jul 2000
TL;DR: Ion Projection Lithography (IPL) as discussed by the authors is the only NGL technique where the mask is not scanned during exposure, and it has the potential of achieving the lowest NGL cost of ownership with the longest multi-generational life time.
Abstract: Ion Projection Lithography (IPL) follows the same principle as optical wafer steppers when using hydrogen or helium ions for the reduction printing of stencil mask patterns to wafer substrates: (1) DUV resists can be used with ion beam exposure; (2) well established optical wafer alignment techniques are used; (3) the mask is stable during exposure. IPL is the only NGL technique where the mask is not scanned during exposure. Because of the very small particle wavelength (5 * 10-5 nm for 100 keV He+ ions there is the possibility of using electrostatic ion-optics with very small numerical aperture (NA approximately equals 10-5). The ion-optics is based on aluminum lens electrode and standard insulator materials. Mechanical tolerances on lens electrode manufacturing and adjustment are in the micrometer range because of in-situ electronic column fine adjustment possibilities. Wafer stage movements with micrometer precision is sufficient through feedback from precise laser interferometer stage position measurements to electronic image placement of the ion image projected to the wafer with on-line 'pattern lock' control. As part of the MEDEA project an IPL process development tool (PDT) is being integrated by IMS with the target to achieve 50 nm resolution within a 12.5 mm exposure field. The IPL production stepper will be based on a similar but more compact ion-optical column, exposing large (e.g. 25 mm) chip fields by stitching of 12.5 mm fields. A 300 mm wafer throughput of 30 WPH is feasible also for the 50 nm node. IPL has the potential of achieving the lowest NGL cost of ownership with the longest multi-generational life time. The practical resolution limit of the IPL technique is below 35 nm.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

20 citations

Patent
12 Aug 2009
TL;DR: In this paper, a method for manufacturing a semiconductor device using a photomask and optical lithography is disclosed, wherein circular patterns on the semiconductor wafer are formed by using circular patterns of varying sizes.
Abstract: A method for manufacturing a semiconductor device using a photomask and optical lithography is disclosed, wherein circular patterns on the semiconductor wafer are formed by using circular patterns on the photomask, which is manufactured using a charged particle beam writer In one embodiment, circular patterns of varying sizes have been formed on the photomask using a single character projection (CP) character, by varying the charged particle beam dosage A method for fracturing circular patterns is also disclosed, either using circular CP characters or using VSB shots wherein the union of the plurality of VSB shots is different than the set of desired patterns

20 citations

Patent
14 Jun 1993
TL;DR: In this article, a reusable conformal photomask for a doubly contoured hemispherical substrate such as a radome or a three-dimensional printed circuit board is presented.
Abstract: In a method for fabricating a reusable conformal photomask for a doubly contoured hemispherical substrate such as a radome or a three-dimensional printed circuit board, a light blocking material is deposited on a shell or tool corresponding to the shape of the radome or printed circuit board. A pattern is then formed in the light blocking material, and portions of the light blocking material corresponding to the pattern are removed. The resulting pattern corresponds to the pattern to be formed on the three-dimensional printed circuit board or radome. A light transmissive layer is then deposited over the light blocking layer for support. The light blocking material and the light transmissive material comprise the reusable conformal photomask which is then removed from the shell. The reusable conformal photomask can be used to form an image of the desired pattern on the three-dimensional printed circuit board or radome.

19 citations

Proceedings ArticleDOI
17 May 1994
TL;DR: In this article, a comparative analysis of binary 'chrome-on-glass', attenuated, biased rim, and phase edge shifted DUV lithography solutions for advanced circuitry in the sub-250 nm image size regime is presented.
Abstract: This paper presents a comparative analysis of binary `chrome-on-glass,' attenuated, biased rim, and phase edge shifted DUV lithography solutions for advanced circuitry in the sub-250 nm image size regime. Lithography techniques are compared based on design complexity, ground rule impact, process latitude, and cost. Data are presented from aerial image simulations (SPLAT), aerial image measurements (AIMSR), and SEM measurements. Phase edge shifted designs clearly exhibit the largest process window for 200 nm linewidths exposed on a 0.5 NA 248 nm DUV stepper. The complexity of the mask engineering (design as well as manufacture) and exposure process for this `hard' phase shifting technique warrants the study of less powerful but also less restrictive phase shifting options. This paper investigates the tradeoffs associated with various applicable phase shift mask (PSM) techniques and presents recommendations based on specific program requirements.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

19 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
82% related
Chemical vapor deposition
69.7K papers, 1.3M citations
81% related
Nanowire
52K papers, 1.5M citations
80% related
Transistor
138K papers, 1.4M citations
80% related
Thin film
275.5K papers, 4.5M citations
80% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195