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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the use of femtosecond laser as a tool for direct material removal is discussed, where experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density.

16 citations

Patent
19 Apr 2007
TL;DR: In this article, a belt-like work with a photo-sensitive layer is conveyed in a conveying direction at a work conveying speed V, and the mask patterns are transferred as a periodical pattern by exposure onto the belt.
Abstract: PROBLEM TO BE SOLVED: To provide a pattern exposure method and apparatus capable of forming periodic patterns of various shapes arranged in a work conveying direction in high throughput in simple equipment with suppressed equipment investment. SOLUTION: A belt-like work 11 provided with a photosensitive layer is conveyed in a work conveying direction F at a work conveying speed V. A first illuminating section 30 illuminates a first photomask 29 in an exposure period T1 determined by the pattern to be transferred by exposure and synchronized with the work conveying speed V. A second illuminating section 66 illuminates a second photomask 65 in an exposure period T2 determined by the pattern to be transferred by exposure and synchronized with the work conveying speed V. The first photomask 29 and the second photomask 65 are disposed leaving a proximity gap from the belt-like work 11, and the respective mask patterns are transferred as a periodical pattern by exposure onto the belt-like work. COPYRIGHT: (C)2007,JPO&INPIT

16 citations

Patent
Ki Won Tae1
19 Apr 2001
TL;DR: In this paper, a method of exposing a photomask substrate, providing an exposing method for correcting a loading effect generated when a photo-mask substrate is dry etched, is presented.
Abstract: A method of exposing a photomask substrate, provides an exposing method for correcting a loading effect generated when a photomask substrate is dry etched. Accordingly, a variation in line width caused by a loading effect generated due to the non-uniformity of a loading density is reduced by a method of performing correction exposure using a dose corresponding to the loading effect due to a desired pattern which is calculated from a relationship represented as the convolution of a Gaussian distribution and a loading density.

16 citations

Journal ArticleDOI
TL;DR: The fabrication of DOEs is demonstrated by use of gray-scale photolithography with a high-energy-beam sensitive glass photomask and diffraction efficiency of 81.5%, which was sufficiently high for the devices to be used as optical pickups.
Abstract: Diffractive optical elements (DOEs) are key components in the miniaturization of optical systems because of their planarity and extreme thinness. We demonstrate the fabrication of DOEs by use of gray-scale photolithography with a high-energy-beam sensitive glass photomask. We obtained DOE lenses with continuous phase profiles as small as 800 μm in diameter and 5.9 μm in the outermost grating pitch by selecting a suitable optical density for each height level and optimizing the process variables. Microlenses patterned with eight levels and replicated by UV embossing with the polymer master mold showed a diffraction efficiency of 81.5%, which was sufficiently high for the devices to be used as optical pickups. The effects of deviations in diffraction efficiency between the DOE height and profile design were analyzed.

16 citations

Patent
Yung-Dar Chen1
02 Dec 1996
TL;DR: In this paper, a method of direct transfer printing of a photoresist pattern layer onto the first pattern layer of a phase shift photomask reticle is described, which allows completion of the photomasks pattern at a much lower cost than the conventional multiple-pass photolithographic process.
Abstract: A method of direct transfer printing of a photoresist pattern layer onto the first pattern layer of a phase shift photomask reticle is described which allows completion of the photomask pattern at a much lower cost than the conventional multiple-pass photolithographic process. The direct transfer of the resist pattern from printing plate to mask surface by means of a platen is especially suitable for non-critical regions such as border regions, seal bands, identification marks, and the like.

16 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195