Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

End of thresholds: subwavelength optical linewidth measurement using the flux-area technique

Abstract: The patented Flux-Area technique of metrology with optical images has been proven to provide accurately and repeatable measurements of defect sizes as small as 0.08 (mu) , and is in use in 12 leading edge mask shops and wafer fabs around the world. This paper describes the extension of this technique for linewidth measurement and the result of test on photomasks, using lines as narrow as 0.25 micrometers . Linewidths were measured with SEM and optical images analyzed with the Flux-Area technique. Results show that the new technique provides linear measurements on even the smallest lines, using visible as well as UV illumination. This technique promises to allow mask makers to continue measuring their masks optically, even as linewidths shrink much smaller than the optical wavelengths used in the measurement. Further, this technique allows older visible light system to be used for measuring even DUV masks. Finally, this technique does not require thresholds: it only requires an image and that the optical magnification be known. The technique simply measures the amount of light absorbed by a feature, the fundamental optical quality of any photomask feature.

A method for improving a simulation model of the photolithographic projection

Abstract: A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.

Photomask, method for forming pattern using the photomask, and method for producing mask data

Abstract: PROBLEM TO BE SOLVED: To decrease MEF (mask error factor) while keeping the interference effect between a light passing a phase shifter and a light passing an opening in a halftone phase shift mask. SOLUTION: The photomask has a phase shifter R1 corresponding to the region of a resist not to be exposed, a transparent part (opening) R2 corresponding to the region of the resist to be exposed, and a semitransparent part R3 interposed between the phase shifter R1 and the opening R2, on a transmitting substrate 100. The mask pattern is composed of the phase shifter R1 and the semitransparent part R3. The phase shifter R1 passes the exposure light while inverting the phase with respect to the opening R2 as the reference, while the semitransparent part R3 has the transmittance which enables partial transmission of the exposure light and transmits the exposure light in the same phase with respect to the opening R2 as the reference. COPYRIGHT: (C)2005,JPO&NCIPI

Method for manufacturing photomask, photomask, pattern transfer method and method for manufacturing flat panel display

Abstract: PROBLEM TO BE SOLVED: To provide a photomask having a fine and accurate transferring pattern.SOLUTION: There is provided a method for manufacturing a photomask having a transferring pattern in which a lower layer film and an upper layer film formed on a transparent substrate are respectively patterned, the method comprising the steps of: preparing a photomask blank formed by laminating the lower layer film and the upper layer film on the transparent substrate; preliminarily etching the upper layer film using a resist pattern formed on the upper layer film as a mask; etching at least the lower layer film using the etched upper layer film as a mask to form a lower layer film pattern; and side-etching at least the upper layer film using the resist pattern as a mask to form an upper layer film pattern.

Large-area patterned 2D conjugated microporous polymers via photomask-assisted solid-state photopolymerization

Abstract: The large-area and scalable patterning process of conjugated polymers is a critical step toward their practical applications in organic electronics. Here we report a wafer-scale patterning method for 2D conjugated microporous polymer (CMP) films on arbitrary substrates via photomask-assisted solid-state photopolymerization under ambient conditions. 2D CMP patterns from monomeric carbazole materials were controllably prepared with variable geometries with the geometric photomasks and desired film thicknesses by modulating the polymerization time. Moreover, 2D CMP patterns with various size and shapes can be formed onto a reduced graphene oxide (rGO) substrate to construct 2D CMP/rGO heterostructures. The obtained heterostructure exhibited a p-type behavior compared to the metal-like property of the rGO film. Combining this solid-state photopolymerization with photomask techniques, a patterned 2D organic/inorganic heterostructure with a precise size and shape control could be further realized for other 2D materials and their integrated devices.