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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


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Patent
29 Apr 2002
TL;DR: In this article, a method for adjusting out-tolerance critical dimensions of an under processed photomask to be within predetermined defined limits after the photosensistive resist material has been removed from the exposed photOMask is presented.
Abstract: A method for adjusting out of tolerance critical dimensions of an under processed photomask to be within predetermined defined limits after the photosensistive resist material has been removed from the exposed photomask. The method includes measuring the critical dimensions of the opaque material of the under processed photomask after the photosensitive resist material has been removed, and exposing the photomask to electrified plasma gases for removing excess opaque material without degrading the reflectivity of the photomask beyond specified limits.

16 citations

Patent
Kiyohito Mukai1, Mitsumi Itou1, Ritsuko Ozoe1, Tatsuo Ohashi1, Hiroyuki Tsujikawa1 
11 Mar 2005
TL;DR: In this paper, a defect that is to cause a problem in fabrication is extracted from a mask pattern, which is one obtained by deforming the mask pattern of a photomask used in a photolithography process.
Abstract: In the verification method of the present invention, a defect that is to cause a problem in fabrication is extracted from a mask pattern. The mask pattern is one obtained by deforming a mask pattern of a photomask used in a photolithography process so as to provide a transferred image close to a desired design pattern. The verification method includes the steps of: determining the exposure dose in the photolithography process; simulating the photolithography process on a computer based on the determined exposure dose; checking whether or not the desired design pattern has been obtained; and locating a fault point and outputting the result.

16 citations

Proceedings ArticleDOI
15 Dec 2003
TL;DR: In this article, the authors present the tool platform, its work flow oriented repair software, and associated deposition and etch processes, as well as a development roadmap towards a production tool, which will be available by the end of this year.
Abstract: High-resolution electron-beam assisted deposition and etching is an enabling technology for current and future generation photo mask repair. NaWoTec in collaboration with LEO Electron Microscopy has developed a mask repair beta tool capable of processing a wide variety of mask types, such as quartz binary masks, phase shift masks, EUV masks, and e-beam projection stencil masks. Specifications currently meet the 65 nm device node requirements, and tool performance is extendible to 45 nm and below. The tool combines LEO's ultra-high resolution Supra SEM platform with NaWoTec's e-beam deposition and etching technology, gas supply and pattern generation hardware, and repair software. It is expected to ship to the first customer in October this year. In this paper, we present the tool platform, its work flow oriented repair software, and associated deposition and etch processes. Unique features are automatic drift compensation, critical edge detection, and arbitrary pattern copy with automatic placement. Repair of clear and opaque programmed defects on Cr, TaN, and MoSi quartz masks, as well as on SiC and Si stencil masks is demonstrated. We show our development roadmap towards a production tool, which will be available by the end of this year.

16 citations

Proceedings ArticleDOI
28 Jul 2014
TL;DR: Wang et al. as discussed by the authors investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist.
Abstract: ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lithography (NGL) solutions Moreover, with change in lithography tool, next generation mask production will be needed According to ITRS 2013, fabrication of finer patterns less than 15nm will be required on mask plate in NGL mask production 5 years later [1] In order to fabricate finer patterns on mask, higher resolution EB mask writer and high performance fabrication process will be required In a previous study, we investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist [2][3] After a further investigation, we constructed higher performance mask process by using new EB mask writer EBM9000 EBM9000 is the equipment supporting hp16nm generation's photomask production and has high accuracy and high throughput As a result, we achieved 155nm pattern on mask with high productivity Moreover, from evaluation of isolated pattern, we proved that current mask process has the capability for sub-10nm pattern These results show that the performance of current mask fabrication process have the potential to fabricate the next-generation mask

16 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used focused ion beam (FIB) technology for photomask defect repair using a carbon film for clear defect repair, which contained 22% gallium, which is an element of the ion beam.
Abstract: Practical results of photomask defect repair using focused ion beam (FIB) technology are presented. From Auger electron analysis, the deposited carbon film for clear defect repair contains 22% gallium, which is an element of the ion beam. Substrate damage produced by ion beam irradiation can be removed incorporating CHF3+O2 reactive ion etching. Printing results using a 5:1 stepper show that the FIB technology can be applied to photomask production.

16 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195