Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

Photomask providing uniform critical dimension on semiconductor device and method of manufacturing the same

Abstract: An approach to correcting non-uniformity of critical dimension (CD) in a semiconductor wafer includes measuring 0th-order light transmitted through or reflected from a photomask in a plurality of regions of the photomask. The photomask is altered to equalize the 0th-order light from the photomask such that the wafer CD is uniform. The photomask can be altered such as by forming a phase grating on the back side of the photomask or by introducing shadowing elements into the photomask to alter the transmittance of the photomask.

Blank mask and photomask

Abstract: PROBLEM TO BE SOLVED: To provide a blank mask and a photomask for use in manufacturing of a flat panel display.SOLUTION: The blank mask includes a light shielding film pattern formed in a region including a light shielding region on a transparent substrate and a phase inversion film formed on the exposed transparent substrate, and the phase inversion film has a phase difference of 160 to 200° relative to exposure light, and the light shielding film pattern and the phase inversion film are etched with the same etching material. Therefore, high resolution can be exhibited when a flat panel display (FPD) device is manufactured using an unmagnification exposure device, and in particular the blank mask is suitable for an unmagnification exposure device using a plurality of exposure light beams.

New optical device

Abstract: PURPOSE:To offer an optical waveguide type optical device whose optical axis is easily aligned by processing photosensitive resin on a filmy base by photolithography and forming a guide for optical axis alignment and an optical waveguide at the same time. CONSTITUTION:The filmy base 1 can hold the guide 2 for optical axis alignment and optical waveguide 3 and when the photolithography is applied, any film which has resistance to a liquid developer is usable. The photosensitive resin which is formed on the base 1 forms the optical waveguide by the photolithography, so the resin should substantially be transparent to the wavelength of guided light. The photosensitive resin formed on the base 1 by coating is exposed to light such as ultraviolet rays through a photomask which has a desired shape pattern and then an unexposed part is washed out by utilizing the difference in solubility between an exposed part and the unexposed part to obtain the optical waveguide 3 which has the desired shape pattern and the guide 2 for optical axis alignment.

First results for hyper NA scanner emulation from AIMS 45-193i

Abstract: Immersion lithography offers the semiconductor industry the opportunity to extend current ArF processes before switching to shorter wavelengths. As numerical apertures of scanners for hyper NA move above 1.0 with immersion lithography, increased attention must be paid to the photomask or reticle and its wafer printability. Feature sizes on the photomask become increasingly critical as they behave more like partial wire grid polarisers, as they become comparable to, or smaller than the wavelength. Besides challenges to address reticle polarisation effects, lithographers must also consider the polarisation state of the illumination and subsequently the contrast loss for light with a TM polarisation state. Such an effect, also called the vector effect, is caused by the increasing angle of incidence of the diffracted light for larger numerical apertures on the scanner. Therefore, for wafer printing using hyper NA scanners, the industry consensus is that TE polarised illumination must be used to meet the stringent requirements of imaging contrast. In this paper, initial results of measurements using the optical test stand and the alpha tool of a completely new AIMS™ 1 tool for the 45nm node will be presented. The system covers all aspects of immersion and polarisation lithographic emulation. Measurements have been made on binary and phase shift masks with different sizes of features and on programmed defects.