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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Patent
19 Feb 1991
TL;DR: In this paper, a photoresist of sufficient thickness to fill a scribe line is applied to an entire substrate, exposing through a photomask having a pattern corresponding to the scribe lines and then developed.
Abstract: A photoresist of sufficient thickness to fill a scribe line is applied to an entire substrate. The photoresist is exposed through a photomask having a pattern corresponding to the scribe line and then developed. A photosensitized gelatin is applied by spincoating on the flat substrate obtained in this process, pattern and then dyed, to obtain a color filter array.

15 citations

Patent
09 Jul 2003
TL;DR: In this paper, an inspection method was proposed to obtain a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on first wafer by use of a first polarized exposure light, and calculating a difference between the first and second optical characteristics.
Abstract: An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.

15 citations

Patent
04 Feb 2009
TL;DR: In this article, a manufacturing method of a film transistor array substrate is described, which reduces the whole manufacturing process of the film transistor arrays substrate to two photomasks by forming the first photoresist layers with different heights, using a first multiple gray-level photomask to form the grid, the source electrode, the drain electrode and the channel and using the way of stripping and removing the residual passivation layer to bare the source and the drain electrodes, thusdecreasing the technical complexity and lowering cost.
Abstract: The invention relates to a manufacturing method of a film transistor array substrate, comprising the following steps: using a first multiple gray-level photomask to form a gate line, a grid, an intermittent data line, a source electrode, a drain electrode and a channel; retaining a first residual photoresist layer over the source electrode and the drain electrode; depositing a passivation layer continuously on the substrate; stripping and removing the first residual photoresist layer and the passivation layer on the first residual photoresist layer to bare the source electrode and the drain electrode; and forming a pixel electrode and a jumper electrode by using a second photomask finally The manufacturing method of film transistor array substrate provided in the invention reduces the whole manufacturing process of the film transistor array substrate to two photomasks by forming the first photoresist layers with different heights, using a first multiple gray-level photomask to form the grid, the source electrode, the drain electrode and the channel and using the way of stripping and removing the residual passivation layer to bare the source electrode and the drain electrode, thusdecreasing the technical complexity and lowering cost

15 citations

Patent
27 Aug 2003
TL;DR: In this paper, a near-field photomask is made up of a light shield film and openings formed in the light shield, which are used to expose an exposure target with a near field light generated through the openings.
Abstract: A near-field photomask is made up of a light shield film and openings formed in the light shield film, the photomask being used to expose an exposure target with a near-field light generated through the openings. The openings formed in the light shield film comprise two or more parallel rows of first slit openings each having a width smaller than 100 nm, and a second slit opening having a width smaller than 100 nm and extended perpendicularly to the rows of first slit openings while interlinking at least two of the rows of first slit openings.

15 citations

Proceedings ArticleDOI
11 Dec 2009
TL;DR: Wang et al. as mentioned in this paper applied TV regularization not only on the mask image but also on mask edges, which forces the curves of edges to be more vertical or horizontal, because they give smaller TV values.
Abstract: Mask manufacturability has been considered as a major issue in the adoption of inverse lithography (IL) in practice. With smaller technology nodes, IL distorts the mask pattern more aggressively. The distorted mask often contains curvilinear contour and irregular shapes, which cast a heavy computation burden on segmentation and data preparation. Total variation (TV) has been used for regularization in previous work, but it is not very effective in regulating the mask shape to be rectangular. In this paper, we apply TV regularization not only on the mask image but also on the mask edges, which forces the curves of edges to be more vertical or horizontal, because they give smaller TV values. Except for rectilinearity, a group of geometrical specifications of the mask pattern set by mask manufacture rule control (MRC) is also important for mask manufacturability. To prevent these characteristics from appearing, we also propose an intervention scheme into the optimization framework.

15 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195