scispace - formally typeset
Search or ask a question
Topic

Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
More filters
Proceedings ArticleDOI
06 May 2005
TL;DR: In this paper, the authors highlight application examples where the advantages of this lithography solution are demonstrated for advanced research and development application with the patterning of 45 nm SRAM and for the fast validation of architecture designs.
Abstract: With the strong increase of mask complexity and associated price for each new technology node, mask less lithography represents more and more an interesting and complementary alternative for ASIC manufacturing especially in the fields of low volume and leading eadge technology applications. In the semiconductor business where prices and cycle time are constantly pressured, the capability and flexibility of the electron beam direct write offer an effective real cost and cycle time opportunity thanks to its high-resolution capability but also to its ability to print, modify or correct design everywhere in a circuit. This paper highlights application examples where the advantages of this lithography solution are demonstrated for advanced research and development application with the patterning of 45 nm SRAM and for the fast validation of architecture designs. This work confirms that mask less lithography can be transparently placed into production environment, in association with the "golden" optical lithography reference.

15 citations

Patent
Min Cao1
17 Jun 2005
TL;DR: In this article, a method of forming a photomask layout is presented, which consists of selecting a pattern feature on the photOMask layout, defining a global area centered at the pattern feature, calculating a pattern density inside the global area, and correcting the pattern features based on the pattern density and patterning process data.
Abstract: The present disclosure provides a method of forming a photomask layout. In one example, the method comprises selecting a pattern feature on the photomask layout, defining a global area centered at the pattern feature on the photomask layout, calculating a pattern density inside the global area, and correcting the pattern feature based on the pattern density and patterning process data.

15 citations

Journal ArticleDOI
TL;DR: In this article, the amplitude and phase modulation of the illumination wave is exploited to improve the resolution of the photomask by replacing it with a mask causing both amplitude and amplitude modulation.
Abstract: Photolithography based on proximity printing offers a high throughput and cost effective patterning technology for production of, for instance, large area liquid crystal displays. The resolution of this technique is limited due to wave-optical effects in the proximity gap between the binary amplitude mask and the substrate. We can improve the resolution drastically by replacing the conventional photomask with a mask causing both amplitude and phase modulation of the illumination wave. We describe a wave-optical design procedure for such masks. The feasibility of the method is demonstrated by results from computer simulations and practical experiments. We show that, for a 50 µm gap, a 3 µm line/space pattern is resolved clearly for visible light illumination, whereas under conventional conditions the image is completely degraded. The proximity mask used in our experiments was fabricated by e-beam lithography with four height levels and two amplitude transmission values.

15 citations

Patent
10 Apr 1979
TL;DR: In this article, an orange colored photomask was developed to be visually transmissive to yellow-orange light formed by heating an exposed and developed silver-halide emulsion coating.
Abstract: An orange colored photomask visually transmissive to yellow-orange light formed by heating an exposed and developed silver-halide emulsion coated photomask. At approximately 200° C., black silver in the photomask begins to show evidence of conversion to a transparent red material. At a temperature of 250° C. to 320° C., the black silver opaque images are rapidly converted to orange, visually transmissive images which are essentially opaque to the ultraviolet light used to expose photoresist covered silicon wafers, while clear areas remain clear.

15 citations

Patent
30 Jul 1998
TL;DR: In this paper, a straight-line pattern is transferred on a substrate by exposure by using a compact photomask with a pattern whose part corresponding to the straight line part of the pattern exposed on the substrate 1A is shortened.
Abstract: PROBLEM TO BE SOLVED: To provide an exposure device and an exposure method by which a straight-line pattern can be efficiently transferred on a substrate by exposure by using a compact photomask. SOLUTION: The photomask 10A is provided with a pattern whose part corresponding to the straight-line part of the pattern exposed on the substrate 1A is shortened. By stopping and moving the photomask 10A along in one direction of the substrate 1A and irradiating it with light 20, the pattern extended in a straight-line state is transferred on the substrate 1A. By using the photomask 10A having the pattern whose part corresponding to the straight- line part of the pattern exposed on the substrate 1A is shortened, the photomask can be made more compact by the shortened part in comparison with a conventional photomask obtained by plotting the whole patterns on it. Thus, the problem on accuracy occurring when the photomask is manufactured and a problem related on the cost thereof can be solved.

15 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
82% related
Chemical vapor deposition
69.7K papers, 1.3M citations
81% related
Nanowire
52K papers, 1.5M citations
80% related
Transistor
138K papers, 1.4M citations
80% related
Thin film
275.5K papers, 4.5M citations
80% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195