scispace - formally typeset
Search or ask a question
Topic

Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
More filters
Patent
Doug David1
24 Feb 2000
TL;DR: In this article, a photomask is provided having a set of alignment pattern openings and circuitry openings formed therethrough, and a latent image of an alignment pattern is formed and received by a masking layer over a substrate.
Abstract: In one embodiment, a photomask is provided having a set of alignment pattern openings and circuitry openings formed therethrough. With the photomask, the substrate is first photoexposed through one of the set of alignment pattern openings and the circuitry openings and not the other. After the first exposing, the substrate is second exposed through the other of the openings on the photomask. In another embodiment, a latent image of an alignment pattern is formed and received by a masking layer over a substrate. The position of the latent image of the alignment pattern is inspected relative to an underlying layer of material over the substrate. Alignment is ascertained through inspection of the latent image relative to the underlying layer of material. In another embodiment, an undeveloped photoresist layer is formed over a substrate. The undeveloped photoresist is exposed to processing conditions effective to form an image of an alignment pattern received over the undeveloped photoresist over a wafer scribe area. The image of the alignment pattern received by the undeveloped photoresist is inspected relative to an underlying substrate structure over the scribe area and alignment information is ascertained therefrom. In a preferred embodiment, if an alignment error is detected, the error can be corrected in real time, and the substrate further processed without reapplication of a masking layer or photoresist layer.

14 citations

Patent
09 Sep 2011
TL;DR: A photomask blank has a film of a transition metal/silicon base material comprising silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom % as mentioned in this paper.
Abstract: A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×C Si /100−6×C M /100>1 wherein C Si is a silicon content in atom % and C M is a transition metal content in atom %.

14 citations

Journal ArticleDOI
TL;DR: In this article, an arrayed waveguide grating based on silica-on-silicon materials with flattened spectral response was designed and fabricated by adding a multimode interference coupler in the input region.
Abstract: We designed and fabricated an arrayed waveguide grating based on silica-on-silicon materials with flattened spectral response by adding a multimode interference coupler in the input region. The theoretical analysis and calculation are given. The device has worked effectively and has been tested with the passband 0.43 nm at 1 dB, 0.72 nm at 3 dB and 1.56 nm at 20 dB respectively, at a cost of power penalty of about 1.5 dB. The crosstalk is less than -30 dB, owing to the high-resolution photomask and well-controlled fabrication processes.

14 citations

Patent
29 Nov 1999
TL;DR: In this article, a photomask is protected against electrostatic discharges, which could damage the mask pattern by forming a ring-shaped protection area, which is formed by an inner region and an outer region of mask material.
Abstract: A photomask (1) comprises a transmissive base plate (2) a first side of which is provided with a layer of a metallic mask material (4). In this layer, a mask pattern (5) is formed which is enclosed by an inner region (6) and an outer region (7) of mask material, the inner region and the outer region being separated by a ring-shaped protection area (8). In this protection area, a protection pattern (9) is formed having tracks (10) with end portions (11) situated near the inner and outer regions and at a distance (12) therefrom, which distance is small compared to the smallest distance between pattern parts in the mask pattern (5). The photomask is thus protected against electrostatic discharges, which could damage the mask pattern.

14 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of plate thickness on particle deposition velocity on a face-up flat plate in a parallel airflow was examined both numerically and experimentally, by employing the Statistical Lagrangian particle tracking (SLPT) model with the use of commercial codes.
Abstract: The effect of plate thickness on particle deposition velocity onto a face-up flat plate in a parallel airflow was examined both numerically and experimentally. Plate thickness was varied as 0.05, 0.925, 2.3, and 6.35 mm, by considering flat plates of negligible thickness, 450 mm wafers, 5 in photomasks, and 6 in EUVL photomasks, respectively. Statistical Lagrangian particle tracking (SLPT) model with the use of commercial codes was employed. The SLPT model was validated by comparing the numerically obtained particle deposition velocities with either the theoretically predicted or the experimentally determined particle deposition velocities, for the flat plates of various thicknesses. Then, the effect of plate thickness on particle deposition velocity onto the face-up flat plate in a parallel airflow was investigated by employing the SLPT model. It was found that the effect of plate thickness should be taken into account, when the particle deposition velocity onto a 5 in photomask (2.3 mm thick) or a 6 in EUVL photomask (6.35 mm thick) was considered. However, it was anticipated that the effect of plate thickness was insignificant, when the particle deposition velocity onto a 450 mm wafer was taken into consideration.

14 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
82% related
Chemical vapor deposition
69.7K papers, 1.3M citations
81% related
Nanowire
52K papers, 1.5M citations
80% related
Transistor
138K papers, 1.4M citations
80% related
Thin film
275.5K papers, 4.5M citations
80% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195