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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Patent
16 Feb 2006
TL;DR: In this article, a method to monitor the state of polarization incident on a photomask in projection printing is presented, which includes a series of phase-shifting mask patterns that take advantage of high NA effects to create a signal dependent on only one incident polarization component.
Abstract: A method to monitor the state of polarization incident on a photomask in projection printing is presented. The method includes a series of phase-shifting mask patterns that take advantage of high NA effects to create a signal dependent on only one incident polarization component. The patterns include in two embodiments a Radial Phase Grating (RPG) and Proximity Effect Polarization Analyzers (PEPA). A test reticle design includes multiple polarimeters with an array of pinholes on the backside of the photomask. This technique is able to monitor any arbitrary illumination scheme for a particular tool.

14 citations

Journal ArticleDOI
TL;DR: In this paper, direct lithographic patterning of lenslet arrays with lens sags up to 75'µm and opto-mechanical structures with thickness up to 118' µm using negative tone hybrid glass materials and greyscale and binary photomasks is demonstrated.
Abstract: Direct lithographic patterning of lenslet arrays with lens sags up to 75 µm and opto-mechanical structures with thickness up to 118 µm is demonstrated, using negative tone hybrid glass materials and greyscale and binary photomasks. The hybrid glass material features a maximum extinction coefficient of 2.0×10−4 µm−1 between 450 and 1600 nm, a refractive index of 1.531 at 632.8 nm and an estimated Abbe number of 45. The patterned structures exhibit rms surface roughness between 10 to 45 nm.

14 citations

Patent
18 Feb 1987
TL;DR: In this article, a projection exposure apparatus has a pattern lighting optical system including an exposure light source for lighting a pattern on a photomask, a projection optical system for forming an image of the pattern lighted by the exposure light sources on the surface of a wafer, and an alignment lighting illumination system for detecting relative positional relationship between the mask pattern and the wafer.
Abstract: A projection exposure apparatus has a pattern lighting optical system including an exposure light source for lighting a pattern on a photomask, a projection optical system for forming an image of the pattern lighted by the exposure light source on the surface of a wafer, an alignment lighting optical system including an alignment light source for lighting alignment marks on the photomask and the wafer, and an alignment optical system for detecting relative positional relationship between the mask pattern and the wafer through the projection optical system, and further the projection optical system includes an image-forming system which exhibits two extremums of axial aberration as a function of wavelength.

14 citations

Patent
20 Oct 2003
TL;DR: In this paper, a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.
Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

14 citations

Patent
12 Apr 2002
TL;DR: In this article, a circuit board with an insulating board, a circuit pattern 22, a metal bump 17 for junction, and an alignment mark 18 formed on the other side of the circuit board for utilizing in alignment when the semiconductor chip is subjected to the flip-chip packaging.
Abstract: PROBLEM TO BE SOLVED: To achieve reliable flip-chip mounting. SOLUTION: The circuit board 10 has an insulating board 11, a circuit pattern 22 formed on one main surface of the insulating board 11, a metal bump 17 for junction formed on a circuit pattern 22 to join an electrode pad provided on one main surface of a semiconductor chip to the circuit pattern 22, and an alignment marks 18 formed on the other of the insulating board 11 for utilizing in alignment when the semiconductor chip is subjected to the flip-chip packaging. The manufacturing method of the circuit board 10 includes a process for forming a resist pattern by the photolithography technique using a single photo mask having a pattern corresponding to both the metal bump 17 for junction and an alignment marks 18, and a process for utilizing the resist pattern to simultaneously form both the metal bump 17 for junction and the alignment marks 18.

14 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195