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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Patent
23 Dec 2002
TL;DR: In this article, the electron beam is set such that the side of the beam is applied in parallel to a borderline between a non-defective pattern and the defect, and a defective portion under an atmosphere of a gas capable of performing chemical etching of a film material forming the photomask pattern.
Abstract: A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.

14 citations

Patent
29 Aug 2001
TL;DR: In this article, a method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a mask, determining an in-plane uniformity of the dimensions, and determining an exposure latitude on the basis of the average value and the in plane uniformity.
Abstract: A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude

14 citations

Journal ArticleDOI
TL;DR: This paper reports the fabrication method of high NA, Mf-MLAs for the extended depth-of-field using single-step photolithography assisted by chemical wet etching and demonstrates the multi-focal plane image acquisition via Mf -MLAs integrated into a microscope.
Abstract: Imaging applications based on microlens arrays (MLAs) have a great potential for the depth sensor, wide field-of-view camera and the reconstructed hologram. However, the narrow depth-of-field remains the challenge for accurate, reliable depth estimation. Multifocal microlens array (Mf-MLAs) is perceived as a major breakthrough, but existing fabrication methods are still hindered by the expensive, low-throughput, and dissimilar numerical aperture (NA) of individual lenses due to the multiple steps in the photolithography process. This paper reports the fabrication method of high NA, Mf-MLAs for the extended depth-of-field using single-step photolithography assisted by chemical wet etching. The various lens parameters of Mf-MLAs are manipulated by the multi-sized hole photomask and the wet etch time. Theoretical and experimental results show that the Mf-MLAs have three types of lens with different focal lengths, while maintaining the uniform and high NA irrespective of the lens type. Additionally, we demonstrate the multi-focal plane image acquisition via Mf-MLAs integrated into a microscope.

14 citations

Patent
12 Apr 2010
TL;DR: In this article, a photoresist film is subjected to a flood exposure to blanket expose the photoresists across the substrate to a first radiation with a relatively lower dosage, followed by a main exposure using a photomask.
Abstract: A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.

14 citations

Journal ArticleDOI
TL;DR: The SHARP microscope as mentioned in this paper is an extreme ultraviolet (EUV)-wavelength, synchrotron-based microscope dedicated to advanced EUV photomask research, which is designed to emulate current and future generations of EUV lithography (EUVL).
Abstract: The Semiconductor High-Numerical-aperture (NA) Actinic Reticle Review Project (SHARP) is an extreme ultraviolet (EUV)-wavelength, synchrotron-based microscope dedicated to advanced EUV photomask research The instrument is designed to emulate current and future generations of EUV lithography (EUVL) The performance of the SHARP microscope has been well characterized for its low-NA lenses, emulating imaging in 025 and 033 NA lithography scanners Evaluating the resolution of its higher-NA lenses, intended to emulate future generations of EUV lithography, requires a photomask with features down to 22-nm half pitch The authors fabricated a sample with features down to 20-nm half pitch, exposing a wafer with a standard multilayer coating in the Berkeley microfield exposure tool, and used it to demonstrate real-space imaging down to 22-nm half pitch on the SHARP microscope The demonstrated performance of SHARP's high-NA zoneplates, together with the extended capabilities of the tool, provide a platform tha

14 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195