Topic
Photomask
About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.
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Patent•
23 Apr 2002
TL;DR: In this paper, a method of evaluating the exposure property of data to a wafer was proposed, in which errors in the production of a photomask and the formation of patterns caused by defocus in the transfer of the data to the wafer were considered.
Abstract: A method of evaluating the exposure property of data to a wafer in which errors in the production of a photomask and the formation of patterns caused by defocus in the transfer of data to the wafer are considered. Accordingly, errors in the production of the photomask and deformation of patterns caused by defocus can be evaluated in the stage of design data. Oversize processing and undersize processing are given to pattern data of the object of the process by figure operation for the whole pattern data within errors of the production of the photomask according to the specification thereof, and simulation is used as a reference to the original pattern data of the object of the process, the oversize data in which oversize processing is given to the pattern data and the undersize data in which undersize processing is given to the pattern data, in which the wafer exposure simulation is carried out under the condition of zero focus, or under each exposure condition of zero focus, a given value minus defocus or a given value plus defocus. The exposure property of data to the wafer is evaluated from the results of the wafer exposure simulation.
13 citations
01 Oct 1964
TL;DR: A fabrication process based on the use of photomask-photoresist techniques to form multilayered devices which meet the requirements of cryotron device densities, process complexity, electrical and structural characteristics of devices, and circuit design considerations is described.
Abstract: Thin film superconductors will find significant applications as computer components only if their potential for economical high density integration in a single unit of manufacture becomes a reality. This paper will describe a fabrication process based on the use of photomask-photoresist techniques to form multilayered devices which meet these requirements. This process is compared with that formerly used, based on mask stencil techniques, to illustrate the significance of this development with respect to 1) cryotron device densities, 2) process complexity, 3) electrical and structural characteristics of devices, and 4) circuit design considerations. The major advances made as a result of this process innovation are related to prospects for significant computer component applications.
13 citations
Patent•
15 Sep 1976
TL;DR: In this article, an improvement in the process of manufacturing integrated circuits to enhance the yield, including the steps of tracking which of the individual dies on a photomask or related series of photomasks has produced a predominance of defective chips on the semiconductor wafer, was discussed.
Abstract: An improvement in the process of manufacturing integrated circuits to enhance the yield, including the steps of tracking which of the individual dies on a photomask or related series of photomasks has produced a predominance of defective chips on the semiconductor wafer, then correcting the die images on the master photomasks and then producing new working masks. This procedure may be repeated several times, each time reducing the number of defect-bearing die images on the photomask and thereby providing a means by which a semiconductor device manufacturer can obtain better yields.
13 citations
03 May 2004
TL;DR: In this article, a numerical model for chip level variability analysis is presented, where gate level critical dimensions are adjusted based on lithographic variability simulations and these perturbed gate lengths are input to a chip timing analyzer.
Abstract: We describe a numerical model for chip level lithography variability analysis. Gate level critical dimensions are adjusted based on lithographic variability simulations and these perturbed gate lengths are input to a chip timing analyzer. Statistical modeling studies highlight the interaction between lithography variability and chip timing performance including the role of lithography error correlation length, optical proximity effect residuals, exposure system imperfections and photomask errors. Understanding these relationships is a critical building block for lithographic error tolerancing, design manufacturability improvement and lithography limited yield enhancements on integrated circuits for which timing is a key performance metric.
13 citations
Patent•
18 Aug 1995
TL;DR: In this article, the authors proposed a deflection correcting device for a photomask which is simple in constitution, is capable of maintaining the exact horizontal accuracy of the polygonal mask installed in the horizontal direction, is able of checking for each work and is able to maintain the horizontal accuracy in the flow of an existing exposing operation.
Abstract: PURPOSE:To obtain a deflection correcting device for a photomask which is simple in constitution, is capable of maintaining the exact horizontal accuracy of the photomask installed in the horizontal direction is capable of checking for each work and is capable of maintaining the horizontal accuracy in the flow of an existing exposing operation. CONSTITUTION:This correcting device 1 for the horizontal accuracy of the photomask P which exposes prescribed patterns to a work by irradiating the work with UV rays is composed of an enclosing section 2 which is provided with positioning marks at least at two points of the photomask P and airtightly holds at least one surface side of the photomask P, a pressure regulating means 3 which regulates the pressure in this enclosing section 2, an image pickup means 4 which picks up the image of the positioning marks of the photomask P and a control section 5 which controls this pressure regulating means 3 by processing the image pickup information from this image pickup means 4. The enclosing section 2 of the deflection correcting device of the photomask is provided with a light transparent plate 2b in the position facing the photomask P.
13 citations