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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Patent
06 Dec 2005
TL;DR: In this article, a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light, and a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate.
Abstract: It is aimed to improve the accuracy of testing when a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light Specifically disclosed is a reflective photomask blank wherein a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate (1) The light absorptive laminate (4) is composed of a first light absorptive layer (41) with EUV light absorbing ability which contains tantalum and silicon, and a second light absorptive layer (42) with DUV light absorbing ability which is arranged on the first absorptive layer (41) and contains tantalum, silicon and at least one of nitrogen and oxygen

13 citations

Patent
Franklin D. Kalk1
11 Apr 2002
TL;DR: In this paper, a pellicle assembly is mounted on a photomask by bringing an adhesive material formed on a surface of a frame associated with the PELLicle assembly in contact with the photOMask.
Abstract: A method and apparatus for coupling a pellicle assembly to a photomask are disclosed. A pellicle assembly is mounted on a photomask by bringing an adhesive material formed on a surface of a frame associated with the pellicle assembly in contact with the photomask. The adhesive material is heated to cause the adhesive gasket to flow and comply with a flatness of the photomask.

13 citations

Patent
04 Feb 2010
TL;DR: In this paper, a halftone mask consisting of an assist pattern and a manufacturing method of the mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off-axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assistance pattern, and may form a transferred image having high contrast of a main pattern.
Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.

13 citations

Patent
18 Dec 1997
TL;DR: In this article, a photomask pattern design apparatus and a design method by which mask patterns subjected to optimization to improve fine processing accuracy are provided and a recording medium recorded with a photOMask pattern program.
Abstract: PROBLEM TO BE SOLVED: To provide a photomask pattern design apparatus and design method by which mask patterns subjected to optimization to improve fine processing accuracy are obtd. and a recording medium recorded with a photomask pattern design program. SOLUTION: The CAD pattern data read in a step S1 is subjected to a design rule check in a step S2 and the pattern part to be subjected to light intensity simulation is extracted. The data conversion from the CAD pattern data extracted in a step S3 to a raster type is executed and the light intensity simulation is executed in a step S4. A contour-line pattern of a prescribed value is thereafter extracted from the numerical data obtd. as a result of the light intensity simulation in a step S5 and this contour-line pattern and the CAD pattern data read in the step S1 are superposed on each other in a step S6. The design rule check is then executed and the point requiring correction is extracted. This point requiring correction is corrected in a step S7. COPYRIGHT: (C)1999,JPO

13 citations

Patent
02 Oct 1972
TL;DR: In this article, a Fraunhoffer diffraction pattern of the two apertured portions of the photomask at the focal plane of the lens is passed through an asymmetrically positioned optical grating.
Abstract: Integrated circuit and thin-film photomasks are inspected by a spatial filtering subtraction technique. The photomask to be inspected is illuminated by coherent, collimated radiation from a laser. An apertured mask is placed in front of the photomask to block light from all except two, spaced-apart columns in the array of features on the photomask. A lens forms Fraunhoffer diffraction patterns of the two apertured portions of the photomask at the focal plane of the lens, and these patterns are passed through an asymmetrically positioned optical grating. The diffraction patterns are then displayed on a screen. The grating produces a central image and two side images of each apertured portion of the photomask. The centermost side images of each aperture are 180* out of phase and cancel, because the columns of the photomask are identical. Differences between the two columns, which include nonperiodic errors in the photomask, are not cancelled and, hence, are readily detected.

13 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195