Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

Photomask, method and apparatus that uses the same, photomask pattern production method, pattern formation method, and semiconductor device

Abstract: The photomask 10 comprises a substrate 11 , a shot region 12 positioned on the substrate 11 , mask patterns 13 formed within the shot region 12 , and mask magnification information 14 x formed in the outside exposure area (recto area) 14 of the shot region 12 . The entire shot region 12 including the mask patterns 13 is elongated in the scanning direction (Y direction) indicated by the arrow. The mask magnifications of the mask pattern 13 are set to a magnitude of 4 in the X direction and a magnitude of 8 in the Y direction, for example. When the step-and-scan exposure technique is carried out using such a photomask in which the mask magnifications in the X and Y directions are different, a high-definition wafer having an equivalent longitudinal and transverse ratio can be transferred.

Process for detecting defects in photomasks

Abstract: The present invention provides a process for performing automatic inspection of advanced design photomasks. In a preferred embodiment, an aerial image of a portion of a photomask is generated. A simulated image corresponding to original pattern data is also generated. The aerial image and simulated image are then compared and discrepancies are detected as possible defects.

A Holographic Photomask Defect Inspection System

Abstract: The need for automatic defect inspection of photomasks has been well recognized by the semiconductor manufacturing industry. Indeed, commercial equipment for this purpose has been available for many years. The method used in the commercial equipment is based on the point-by-point comparison of one die with an adjacent die or with the data base, in a serial fashion. As the minimum features of the production integrated circuit (IC) pattern approach micrometer and submicrometer dimensions and the pattern area increases to about 150 mm in diameter, the inspection time per photomask by this method becomes formidably long, sometimes hours. To reduce the inspection time, radically different inspection methods are clearly needed. One such method is based on an optical information processing technique.1'2 This method has an inherent advantage: the IC pattern and the defect information over the entire photomask are processed simultaneously, or in parallel. However, several difficulties in the past have prevented this method from being practical. Under the sponsorship of Insystems, scientists at the University of Daytsn Research Institute were able to circumvent these difficulties by means of holography.'. Based on the successful results achieved there, Insystems undertook the task of developing an automated photo-mask inspection system, the Model 8405. This system is designed for turn-key operation in IC manufacturing facilities. Major performance specifications of the system are listed below. . Acceptable photomask sizes: standard sizes or others up to 178 mm x 178 mm (7" x 7") . Acceptable photomask thicknesses: standard thicknesses or others up to 6.4 mm (0.25") with or without pellicle . Detectable defect sizes: 0.5 um or larger with or without pellicle . Automatic inspection time: 7 minutes or less for 100 mm x 100 mm photomasks . Hologram or filter production time: approximately 6 minutes . Defect report formats: include computer printout of defect map (indicating defect types, sizes and locations), video terminal displays of holographic defect image and corresponding microscope image The purpose of this paper is to describe this system and present some preliminary results.

Solid-state image-pickup device

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state image-pickup device, the potential of the readout gate of which is set by optimally solving troubles due to misalignment of a mask pattern at forming of the readout gate. SOLUTION: For manufacturing a solid-state image-pickup device, a readout gate 15 is formed together with a photosensor 14 by simultaneous injection of an impurity through the use of a step of impurity injection for improving the transmission efficiencies of a vertical CCD(charge-coupled device) register 13. In this way, the potential of the readout gate 15 under gate electrode is set optimally, without being affected by misalignment of a photomask.