Topic
Photomask
About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.
Papers published on a yearly basis
Papers
More filters
TL;DR: This work demonstrates that MAP, using a single photomask, can generate patterns having different symmetries and periodicities from that of the lens array.
Abstract: Microlens array photolithography (MAP) is a technique in which arrays of microlenses positioned close to photoresist reduce cm-sized figures on photomasks and form μm-scale images in the photoresis...
36 citations
Patent•
01 Dec 2003
TL;DR: An optical proximity correction (OPC) method for correcting a photomask layout has been proposed in this article, where a rule-based OPC by taking account of the assist feature bias is used to compute a target bias of the photOMask layout.
Abstract: An optical proximity correction (OPC) method for correcting a photomask layout. The photomask layout has at least a photomask pattern. The steps of the OPC method include collecting an assist feature bias of a predetermined assist feature, performing a rule-based OPC by taking account of the assist feature bias to compute a target bias of the photomask layout, outputting a corrected photomask layout according to the target bias, and adding the predetermined assist feature to the corrected photomask layout.
36 citations
Patent•
09 May 1997TL;DR: In this article, the authors propose an approach to aligning embedded phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths < 400 nm.
Abstract: Attenuating embedded phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths < 400 nm comprise at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound at selected lithographic wavelengths < 400 nm and are made by depositing at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound onto a substrate.
36 citations
Patent•
21 Nov 1988TL;DR: In this paper, a method for obtaining precise centering by scanning the slits with the beams, sampling light transmitted through the transparent slits, and fitting the samples to a parabola by the use of a computer is described.
Abstract: Photomasks (11, 12) are aligned on opposite sides of a wafer by directing light beams through zone plates (13 A-C) in one photomask and through aligned transparent slits (14 A-C) on the other photomask. Simulantaneous detection of the beams by photodetectors (18 A-C) indicates alignment. A method for obtaining precise centering by scanning the slits with the beams, sampling light transmitted through the slits, and fitting the samples to a parabola by the use of a computer (27) is also described.
35 citations
TL;DR: In this paper, numerically controlled local wet etching (NC-LWE) is proposed for fabricating ultraprecision optics or finishing functional materials. But the method is not suitable for high dimensional materials.
35 citations