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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Journal ArticleDOI
TL;DR: In this article, a method for the fabrication of optical structures in GaAs substrates using UV holographic lithography in SU-8 resist, pro-cessed to fabricate a mask, followed by chemically assisted ion-beam etching (CAIBE).
Abstract: We develop a method for the fabrication of optical structures in GaAs substrates using UV holographic lithography in SU-8 resist, pro- cessed to fabricate a mask, followed by chemically assisted ion-beam etching (CAIBE) The technique is based on simple processing steps without procedures of mask transfer, enabling easy fabrication of optical structures A predevelopment relief behavior is investigated to optimize the processing parameter to form an etching mask in SU-8 By adjusting both exposure dose and time in the postexposure bake (PEB), an SU-8 mask with a flexible duty cycle and high profile quality can be easily produced Furthermore, an optical structure with a rectangular shaped profile and a 1-mm period in a GaAs substrate is produced by optimizing the processing parameters during the CAIBE process © 2003 Society of

31 citations

Patent
Bernt Narken1, Henry Carl Schick1
02 Dec 1982
TL;DR: In this article, an integrated circuit photomask consisting of a transparent dielectric substrate, such as glass and quartz based substrates, and a conductive surface adjacent region, is described.
Abstract: The invention relstes to an integrated circuit photomask. The photomask it formed of a transparent dielectric substrate (1), such as glass and quartz based substrates, and has a conductive surface adjacent region (3), which is patterned with sequential overcoatings of a composite chrome oxide layer (5) and a chrome film (6). The mask comprises a combination of varied reflectivities to provide proper densities for the opaque areas of the mask.

31 citations

Patent
Hara Yasuhiko1, Nobuyuki Akiyama1, Satoru Fushimi1, Yoshimasa Oshima1, Aoki Nobuhiko1 
12 Jul 1982
TL;DR: In this paper, a pattern detection system for inspecting defects in fine or minute patterns such as photomask patterns at a fast speed is described, which consists of an illuminator, a device for moving objects with the patterns to be inspected with being illuminated by the illuminators, an optical system for imaging the objects, a scanner for scanning the objects in a direction intersected at a given angle with respect to direction of the objects moved by the moving device and arrays of photosensors arranged linearly in the direction perpendicular to that of images on the objects scanned by the
Abstract: A pattern detection system for inspecting defects in fine or minute patterns such as photomask patterns at a fast speed is disclosed. The system comprises an illuminator, a device for moving objects with the patterns to be inspected with being illuminated by the illuminator, an optical system for imaging the objects, a scanner for scanning the objects in a direction intersected at a given angle with respect to direction of the objects moved by the moving device and arrays of photosensors arranged linearly in a direction perpendicular to that of images on the objects scanned by the scanner, on the surface of which the images are formed by the optical system and for producing respective outputs parallelly on the time basis.

31 citations

Patent
01 Feb 2002
TL;DR: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen as mentioned in this paper.
Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen An etch stop layer is added to improve the etch selectivity of the phase shifting layer A wide range of optical transmission (0001% up to 15% at 157 nm) is obtained by this process

31 citations

Patent
19 Feb 2007
TL;DR: In this article, the authors proposed a method for manufacturing a four-gradation photomask with a small number of times of drawing through a photolithography stage. But, the manufacturing process includes the stages of preparing a blank which has a first translucent film and a light shield film formed of materials mutually resistive to etching thereof on a light-transmissive substrate.
Abstract: PROBLEM TO BE SOLVED: To manufacture a four-gradation photomask with a small number of times of drawing through a photolithography stage. SOLUTION: The manufacturing method includes the stages of: preparing a photomask blank which has a first translucent film and a light shield film formed of materials mutually resistive to etching thereof on a light-transmissive substrate; forming a first resist pattern on the light shield film; etching the light shield film using the first resist pattern as a mask, and then etching the translucent film and further peeling the first resist pattern; forming a second translucent film on the light-transmissive substrate and light shield film; forming a second resist pattern on the second translucent film; and etching the second translucent film and light shield film using the second resist pattern as a mask and then removing the second resist pattern. COPYRIGHT: (C)2007,JPO&INPIT

31 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195