Topic
Photomask
About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.
Papers published on a yearly basis
Papers
More filters
•
11 Aug 2005
TL;DR: The science and technology of industrial photomask production, including fundamental principles, industrial production flows, technological evolution and development, and state of the art technologies are discussed in this paper.
Abstract: Photomasks are defect-free optical templates -- the printing masters for the fabrication of integrated circuits (ICs). When IC feature sizes fall below the exposure tool’s source wavelength, photomask fabrication becomes difficult: very strict mask critical dimension (CD) and feature placement specifications, intensive capital equipment investment, unique raw materials and applications, and special expertise requirements for photomask fabrication technologists are necessary to fabricate modern microelectronics. Thus the rapid recent growth of the field and the need for this book. This text details the science and technology of industrial photomask production, including fundamental principles, industrial production flows, technological evolution and development, and state of the art technologies. Focusing on industrial applications rather than pure science, the goal of the book is to provide a comprehensive reference for any engineer developing microelectronic manufacturing processes
Table of contents
Introduction
Data Preparation and Design
Pattern Generation
Pattern Transfer
Photomask Metrology
Defect Control and Finishing
Inspection, Repair, and Cleaning
Resolution Enhancement Techniques
Water Fabrication Issues
Future Developments
Appendices
References
29 citations
•
28 Feb 1996TL;DR: In this article, a phase shift photomask capable of being produced by dry etching with adequate in-plane uniformity of pattern dimension even if there is a large difference in exposed area ratio between different areas on the mask is presented.
Abstract: A phase shift photomask capable of being produced by dry etching with adequate in-plane uniformity of pattern dimension even if there is a large difference in exposed area ratio between different areas on the mask. In a phase shift photomask having an area provided with a phase shift layer which practically shifts the phase relative to another area, a dummy etching pattern (13) for dry etch rate correction is provided in an area other than a pattern exposure area (9 and 10), or a dummy etching pattern for dry etch rate correction having a size less than the limit of resolution attained by transfer is provided in the pattern exposure area, thereby reducing the etch rate nonuniformity due to the pattern density variation in the process of dry etching the phase shift photomask, and thus providing a phase shift photomask of high accuracy.
29 citations
••
TL;DR: The paper describes a comprehensive approach for mask process correction including calibration and model building, model verification, mask data correction and mask data verification as well as other applications of mask process Correction for gaining operational efficiency in both tapeout and mask manufacturing.
Abstract: The extension of optical lithography at 193nm wavelength to the 32nm node and beyond drives advanced resolution
enhancement techniques that impose even tighter tolerance requirements on wafer lithography and etch as well as on
mask manufacturing. The presence of residual errors in photomasks and the limitations of capturing those in process
models for the wafer lithography have triggered development work for separately describing and correcting mask
manufacturing effects. Long range effects - uniformity and pattern loading driven - and short range effects - proximity
and linearity - contribute to the observed signatures. The dominating source of the short range errors is the etch process
and hence it was captured with a variable etch bias model in the past [1]. The paper will discuss limitations and possible
extensions to the approach for improved accuracy. The insertion of mask process correction into a post tapeout flow
imposes strict requirements for runtime and data integrity. The paper describes a comprehensive approach for mask
process correction including calibration and model building, model verification, mask data correction and mask data
verification. Experimental data on runtime performance is presented.
Flow scenarios as well as other applications of mask process correction for gaining operational efficiency in both tapeout
and mask manufacturing are discussed.
29 citations
•
01 Dec 2008TL;DR: In this article, a conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask.
Abstract: Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned double patterning (SADP) process A conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask An anisotropic etch of the non-sacrificial layer leaves non-sacrificial ribs above a substrate A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features No hard mask is needed to form the non-sacrificial ribs, reducing the number of processing steps involved
29 citations
•
IBM1
TL;DR: In this paper, a spinning diffraction filter is placed in a stepper so as to provide annular illumination on a time averaged basis, which can be used for resolution enhancement in an easily manufacturable and flexible way and without significant loss of light intensity.
Abstract: Uniform illumination of a photomask in optical lithography is achieved with annular illumination of the conjugate pupil plane in a lithography tool. A spinning diffraction filter is placed in a stepper so as to provide annular illumination on a time averaged basis. This approach provides annular illumination for resolution enhancement in an easily manufacturable and flexible way and without significant loss of light intensity. No illuminator redesign in the photolithographic exposure tool is required.
29 citations