Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

Photomask inspection apparatus and method using corner comparator defect detection algorithm

Abstract: Defect detection apparatus including a mechanical and optical system for scanning duplicate areas of a photomask to be inspected, electronic means for converting the optically scanned information to digitized form, memory for storing such information, and means for comparing information obtained from one inspected area to the other inspected area to determine differences therebetween, such differences being classified as defects. The detection is accomplished using a vector gradient within a matrix technique to develop candidate and cancellor information which is then logically manipulated to qualify the data obtained from each pixel matrix and then, after qualification, is used to determine whether or not a defect has been detected. The subject invention has particular application to the detection of defects occurring at pattern corners within the inspected photomask and is specifically directed to overcoming difficulties previously encountered in detecting such defects.

Method for checking printability of a lithography target

Abstract: A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.

0.3-micron Optical Lithography Using A Phase-Shifting Mask

Abstract: Improved resolution of an available i-line (365nm) stepper using a phase-shifting mask is discussed. The resolution investigated here is not only for periodic lines but also for isolated spaces and hole patterns. To obtain a narrow bright line for printing a fine isolated space on a wafer, two additional line apertures with widths smaller than the critical dimension of the stepper lens are placed on each side of the main aperture of the mask. The optical phase of the main aperture and those of additional apertures are opposite. The additional apertures play a role in reducing the bright feature size to less than the line spread function of the lens. Similarly, printing a fine hole is accomplished by using a main aperture surrounded by four additional apertures. The intensity distribution on the wafer is calculated by comparing the results obtained with a phase-shifting mask and those obtained with a conventional transmission mask. Patterns are also printed on the wafer using an i-line stepper with a nominal 0.55 μm resolution. A pattern of 0.3-μm lines and spaces, 0.3-μm isolated spaces and 0.4-μm hole patterns are resolved using the phase-shifting mask. This resolution is impossible with a conventional transmission mask. The effects of variations in the optical phase of the additional apertures are also investigated. The intensity calculations and experimental results suggest that it is possible to control the position of the best focal plane by changing the optical phases of the additional apertures.

Prototyping of Masks, Masters, and Stamps/Molds for Soft Lithography Using an Office Printer and Photographic Reduction

Abstract: This paper describes a practical method for the fabrication of photomasks, masters, and stamps/molds used in soft lithography that minimizes the need for specialized equipment. In this method, CAD files are first printed onto paper using an office printer with resolution of 600 dots/in. Photographic reduction of these printed patterns transfers the images onto 35-mm film or microfiche. These photographic films can be used, after development, as photomasks in 1:1 contact photolithography. With the resulting photoresist masters, it is straightforward to fabricate poly(dimethylsiloxane) (PDMS) stamps/molds for soft lithography. This process can generate microstructures as small as 15 microm; the overall time to go from CAD file to PDMS stamp is 4-24 h. Although access to equipment-spin coater and ultraviolet exposure tool-normally found in the clean room is still required, the cost of the photomask itself is small, and the time required to go from concept to device is short. A comparison between this method and all other methods that generate film-type photomasks has been performed using test patterns of lines, squares, and circles. Three microstructures have also been fabricated to demonstrate the utility of this method in practical applications.

Reduction of diffraction effect of UV exposure on SU-8 negative thick photoresist by air gap elimination

Abstract: This paper reports a novel way to compensate the air gap between photomask and photoresist for eliminating UV light diffraction on photoresist, which greatly increases the sidewall straightness of high-aspect-ratio resist structures. In this research, SU-8 negative tone photoresist was used for experiments, and glycerol was employed as an index match material for bridging air gap between photomask and photoresist during exposure. Results showed that a high aspect ratio wall structure of 156 μm thick and 25 μm wide had a 45% pattern width error when exposed under 100 μm air gap, while glycerol compensated process accomplished a straight resist wall without appreciable error. This method is simple and cheap to employ, compared to the usage of costly thick-photoresist-film spinner for resist planarization. Numerical simulation on the diffraction effect upon the structure wall has also been conducted. The calculated and experiment wall profiles showed similarity in trend.