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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Patent
Jr. James Nelson Cook1
13 Mar 1998
TL;DR: In this article, a method and apparatus for removing a pellicle frame (52) from a photomask plate (50) where the pellicles frame was adhered to a surface of the photOMask plate by an adhesive material (54) was disclosed.
Abstract: A method and apparatus are disclosed for removing a pellicle frame (52) from a photomask plate (50) where the pellicle frame (52) is adhered to a surface of the photomask plate (50) by an adhesive material (54). Tension is applied to the adhesive material (54) by applying force to separate the pellicle frame (52) and the photomask plate (50). A second surface of the photomask plate (50), opposite from the surface to which the pellicle frame (52) is adhered, is heated to raise the temperature of the adhesive material (54) and to raise the temperature of the photomask plate (50) greater than the temperature of the pellicle frame (52). The tension on the adhesive material (54) is then maintained until the adhesive material (54) releases the pellicle frame (52) from the photomask plate (50).

28 citations

Patent
03 Sep 1982
TL;DR: A CMOS process utilizes preferential oxidation of arsenic-doped regions and reduced diffusivity of boron in arsenic doped regions to eliminate photomask steps and to form self-aligned enhanced p+ and n+ contacts as mentioned in this paper.
Abstract: A CMOS process utilizes preferential oxidation of arsenic-doped regions and the reduced diffusivity of boron in arsenic-doped regions to eliminate photomask steps and to form self-aligned enhanced p+ and n+ contacts.

28 citations

Patent
Kazuya Kamon1
18 Dec 2002
TL;DR: In this paper, a projection aligner is proposed, in which ultraviolet light emitted from a lamp housing is split by a fly-eye lens into a large number of point light sources which are independent of one another.
Abstract: A projection aligner of the present invention, in which ultraviolet light emitted from a lamp housing is split by a fly-eye lens into a large number of point light sources which are independent of one another. Further, in this projection aligner, the light is shaped by an aperture, so that a secondary light source plane is formed. Moreover, after an exposure area is established by a blind, a photomask is illuminated. Thereafter, an image of a light source is formed on a pupillary surface of a projection optical system from light diffracted by the photomask. Furthermore, a wave front aberration is compensated by an aberration eliminating filter placed on the pupillary surface of the optical system of the projection aligner. Then, the image of a circuit pattern is formed on a wafer. Thereby, the influence of the aberration of the optical system is eliminated. Consequently, the high-accuracy transferring of the pattern can be achieved.

28 citations

Patent
26 Sep 2006
TL;DR: In this article, a method for mask blanks with anti reflective coatings comprising at least two sublayers was proposed. But this method was only applicable to binary and phase shift masks with an exposure wavelength of 300 nm or less.
Abstract: The present invention relates to mask blanks with anti reflective coatings comprising at least two sublayers. Such bilayer or multilayer anti reflective coatings are advantageous for binary and phase shift mask blanks for use in lithography for an exposure wavelength of 300 nm or less with improved anti reflection properties; and to EUVL mask blanks having improved inspection properties.

28 citations

Patent
09 May 1996
TL;DR: In this article, a phase shift layer-containing photomask was developed to reduce or limit the incidence of phase shifter pattern deficiencies or other defects and at lower costs as well.
Abstract: The present invention relates particularly to a process for producing phase shift layer-containing photomasks, which can produce phase shift photomasks through a reduced or limited number of steps to reduce or limit the incidence of phase shifter pattern deficiencies or other defects and at lower costs as well. For instance, a photomask blank of the structure that a substrate is provided thereon with an electrically conductive layer and a light-shielding thin film in this order is used to coat a starting material for spin-on-glass uniformly on a light-shielding pattern formed thereon. A pattern is directly drawn on the coaxed-spin-on-glass layer with energy beams emanating from electron beam exposure hardware, etc., and the substrate is developed with a solvent after pattern drawing with energy beams to wash off an excessive spin-on-glass portion other than the spin-on-glass layer irradiated with the ionizing radiations. Finally, the post-development substrate is baked to form a phase shifter pattern.

28 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195