Topic
Photomask
About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.
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Patent•
14 May 2003
TL;DR: In this article, the remaining defects are removed by using a configuration in which irradiation with a laser beam is performed from below with a to-be-machined surface directed downward, and irradiation is performed in an atmosphere containing a halogenated hydrocarbon gas (as an example, ethyl iodide).
Abstract: In a laser machining method for removing remaining defects on a photomask, there has been problems to be resolved that damage is formed at the portion of the substrate where the defect has been removed, thus resulting in degraded quality of machining. In a laser machining method for removing remaining defects on a photomask by a method of laser machining, the remaining defects are removed by using a configuration in which irradiation with a laser beam is performed from below with a to-be-machined surface directed downward, and irradiation with a laser beam in an atmosphere containing a halogenated hydrocarbon gas (as an example, ethyl iodide).
27 citations
Patent•
TSMC1
TL;DR: In this paper, a system and method for assessing a design layout for a semiconductor device level and for determining and designating different features of the design layout to be formed by different photomasks by decomposing the layout is presented.
Abstract: Provided is a system and method for assessing a design layout for a semiconductor device level and for determining and designating different features of the design layout to be formed by different photomasks by decomposing the design layout. The features are designated by markings that associate the various device features with the multiple photomasks upon which they will be formed and then produced on a semiconductor device level using double patterning lithography, DPL, techniques. The markings are done at the device level and are included on the electronic file provided by the design house to the photomask foundry. In addition to overlay and critical dimension considerations for the design layout being decomposed, various other device criteria, design criteria processing criteria and their interrelation are taken into account, as well as device environment and the other device layers, when determining and marking the various device features.
27 citations
Patent•
04 Nov 1981
TL;DR: In this paper, a photomask (hard mask) blank having a masking film of metallic chromium, chromium oxide, or the like, formed on a transparent substrate, is presented.
Abstract: In a photomask (hard mask) blank having a masking film of metallic chromium, chromium oxide, or the like, formed on a transparent substrate, there are interposed between the transparent substrate and the masking film a translucent and electroconductive film made of molybdenum, tantalum or the like and a translucent and chemically resistant protective film made of aluminum oxide, silicon oxide or the like, in the order mentioned from the side of the transparent substrate. The photomask obtained from this photomask blank is free from distortions or defects of transfer patterns caused by generation of electrostatic charges and also exhibits excellent durability in repeated uses, with intermediate repeated chemical washing.
27 citations
01 Jun 1990
TL;DR: In this paper, the minimum feature size with a depth of focus (DOF) required for LSI fabrication process is analyzed based on calculated optical image characteristics and experimentally obtained image quality criterion for pattern delineation.
Abstract: Practical resolution the minimum feature size with a depth of focus (DOF) required for LSI fabrication process is analysed. Analysis is based on the calculated optical image characteristics and experimentally obtained image quality criterion for pattern delineation. It is found that practical resolution is not improved but may even be degraded with increasing NA and/or shortening wavelength. This means that the high resolution capability of advanced optical systems cannot be effectively utilized in actual fabrication of future LSIs if conventional optical lithography is used. To overcome this limitation the effectiveness of advanced image formation techniques the phaseshifting method and the FLEX method are investigated. It is shown that these techniques make it possible to overcome the limitations of conventional optical lithography. 1.
27 citations
07 May 1996
TL;DR: In this paper, a gray-level mask was used in a optical contact aligner to print a multilevel Diffractive Optical Element (DOE) in a single optical exposure, and a chemically assisted ion beam etching process was used to transfer the DOE structure from the resist into the substrate.
Abstract: Micro-optics such as diffractive optics and computer generated holograms are essential components for modern optical design To reduce their unit fabrication cost we describe a method of reproducing micro-optics in quantities A true gray-level mask was fabricated in High Energy Beam Sensitive (HEBS)-Glass by means of a single e-beam direct write step This gray-level mask was used in a optical contact aligner to print a multilevel Diffractive Optical Element (DOE) in a single optical exposure A chemically assisted ion beam etching process has been used to transfer the DOE structure from the resist into the substrate
27 citations