Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

Nonreflecting photomasks and methods of making same

Abstract: A nonreflecting photomask comprises a pattern of an anodized, film-forming material on a transparent substrate. The thickness of the anodic oxide is chosen such that when the mask is employed in selectively exposing a photoresist-coated body to light (by placing the oxide against the photoresist), destructive interference prevents light reflected from the body to the oxide from being re-reflected to the photoresist. Thus, undesirable exposure of masked portions of the photoresist is precluded.

Protein micropatterns: A direct printing protocol using deep UVs.

Abstract: The described protocol is a simple method to make protein micropatterns with a micron size resolution. It can be applied to control cell shape and adhesive geometry, and also for any other assay requiring protein patterning. It is based on the use of a photomask with microfeatures to locally irradiate with deep UV light (below 200 nm) an antifouling substrate, making it locally adsorbing for proteins. The entire process can be subdivided into three main parts. The first part describes the design of a photomask. The second part describes the passivation (antifouling treatment) of the substrate, its irradiation, and the binding of proteins. The entire process can be completed in a couple of hours. It requires no expensive equipment and can be performed in any biology lab. The last part describes cell deposition on the micropatterned substrate. We also provide a discussion with pitfalls and alternative techniques adapted to various substrates, including silicone elastomers.

Correction method and correction apparatus of mask pattern

Abstract: A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

Method for manufacturing semiconductor device

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device by which the effective resist thickness formed in a lower level can be easily controlled, without introducing multiple dummy wafers in a lot aside from wafers for formation of devices SOLUTION: Dummy recesses whose width changes in the direction of the length are provided on a semiconductor substrate, at the same time as formation of recesses on the substrate Photoresist is applied to an area, including the recesses The substrate is exposed to light through a photomask to form a gate pattern 23 and a dummy gate pattern 24 in each recess The change in the width of the dummy gate pattern 24 is observed, and the thickness of a photoresist film 5 is optimized, according to the change of the position

Integrated circuit layout design

Abstract: Provided is a photolithography apparatus including a photomask. The photomask includes a pattern having a plurality, of features, in an example, dummy line features. The pattern includes a first region being in the form of a localized on-grid array and a second region where at least one of the features has an increased width. The apparatus may include a second photomask which may define an active region. The feature with an increased width may be adjacent, and outside, the defined active region.