Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.

Photomask and projection exposure system

Abstract: A photomask having a sufficient durability against an exposure beam of short wavelength and free from foreign matters to adhere to the pattern for transfer. An original pattern for transfer is formed in a pattern region (52) on a pattern surface (1P) of a reticle (1). A wafer (3) transparent to the exposure beam is disposed over the pattern surface (1P) at an interval of 2 to 10 mm from the reticle through a rectangular holding frame (2) in such a way as to encompass the pattern region (52). When the exposure beam is of ultraviolet radiation with a wavelength of 300 to 100 nm, the wafer (3) is a quartz glass sheet having a thickness of 0.05 to 2 mm or a sheet of fluorite both sides of which are polished.

Manufacturing method of semiconductor integrated circuit device, and semiconductor integrated circuit device

Abstract: When a through hole 17 is transferred on a pair of contact holes 10 putting a data line DL therebetween, even if a pair of through holes 17 putting the data line DL therebetween are deviated, the pair of through holes are connected to the contact hole 10 b and not connected to the data line DL. By this manner, a mask pattern formed by a photomask is use so as to be deviated and disposed in a direction separately from the data line DL at a design stage. This results in improvement of an alignment tolerance of the pattern.

Microlens arrays with integrated pores as a multipattern photomask

Abstract: Photolithographic masks are key components in the fabrication process of patterned substrates for various applications. Different patterns generally require different photomasks, whose total cost is high for the multilevel fabrication of three-dimensional microstructures. We developed a photomask that combines two imaging elements—microlens arrays and clear windows—in one structure. Such structures can be produced using multibeam interference lithography. We demonstrate their application as multipattern photomasks; that is, by using the same photomask and simply adjusting (i) the illumination dose, (ii) the distance between the mask and the photoresist film, and (iii) the tone of photoresist, we are able to create a variety of different microscale patterns with controlled sizes, geometries, and symmetries that originate from the lenses, clear windows, or their combination. The experimental results agree well with the light field calculations.

Creation of embedded structures in SU-8

Abstract: Two methods were investigated for the creation of encapsulated micro-fluidic channels and bridges in negative tone SU-8 photoresist. The first uses two exposures at different wavelengths to create the channel sidewalls and microchannel encapsulation layer; the other method creates both using a single I-line (365 nm) exposure and a grayscale photomask. These methods can define structures with vertical dimensions ranging to hundreds of microns and introduces very little extra processing complexity. For the dual wavelength method, an I-line light source is used to define the channel walls while a non-collimated deep-UV (254 nm) light source provides a large energy dose to the top surface of the SU-8 to produce a membrane over all the channels. Using the dual wavelength method allows SU-8 to be used as the material for the channels and the encapsulation method is self-limiting avoiding the requirement for precise control over the exposure dose. The rate of UV dose and the post-exposure baking parameters are critical to the quality and strength of the micro-channels. Properly designed channels have been successfully developed in lengths up to 1 cm. Alternatively using a grayscale Zn/Al bimetallic photomask and a single I-line exposure, 3D bridge micro-structures were successfully made on SU-8. The use of grayscale masks for both techniques also provides the possibility of shaping the channel. With the ability to create micro-bridges, further research will be performed to investigate how well the single exposure technique can be used to produce micro-channels of various sizes and dimensions.

Method for correcting photomask pattern

Abstract: A method for correcting a photomask pattern is provided. The correcting method performs a verification of a focus-exposure matrix (FEM) and an overlay variation on a layout area having contact holes or vias in a layout pattern so as to generate a hint information. The layout pattern of the photomask is corrected according to the hint information to prevent the contact holes or vias from being exposed in arrangement to corresponding metal layer, poly layer, or diffusion layer.