Topic
Photomask
About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.
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Patent•
16 Dec 1994TL;DR: In this paper, a photomask was used for forming a T-shaped gate structure on a high speed FET through a photolithography, comprising opaque layer patterns 2 and 2a for defining a head portion of the T-shape gate structure and half-tone layer patterns 3 and 3a to define a foot portion thereof.
Abstract: The present invention relates to a photomask for forming a T-shaped gate structure on a high speed FET through a photolithography, comprising opaque layer patterns 2 and 2a for defining a head portion of the T-shaped gate structure and half-tone layer patterns 3 and 3a for defining a foot portion thereof. The half-tone film patterns composed of a chrome layer are deposited to a thickness thinner than that of the opaque layer patterns so that the half-tone layer patterns show a relatively lower transmittance to an incident beam. The application of the photomask of the invention to the process for forming a T-shaped gate structure improves process reproducibility and leads to great cost savings.
24 citations
Patent•
27 Jan 2009
TL;DR: In this paper, a photomask blank consisting of a light-shielding film composed of at least two layers on a transparent substrate was provided, and the photomasks were dry-etched with a chlorine-based gas containing no oxygen.
Abstract: PROBLEM TO BE SOLVED: To provide a photomask blank where an extremely fine pattern is formed, and a photomask which includes the fine pattern formed on the photomask blank. SOLUTION: The photomask blank includes a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride contained less than 62 at% nitrogen. The material is dry-etched with a chlorine-based gas containing no oxygen. The light-shielding film further includes a front-surface antireflection layer formed on the upper layer face of the light-shielding layer and made of a material not dry-etched with a chlorine-based gas, but dry-etched with a fluorine-based gas. COPYRIGHT: (C)2010,JPO&INPIT
24 citations
Patent•
26 Jun 2002TL;DR: In this article, a photomask and integrated circuit manufactured by eliminating design rule violations during construction of a mask layout block are disclosed, and a patterned layer is formed using a mask pattern file created by analyzing a selected position for a polygon in mask layout blocks, if the selected position is less than a design rule from a technology file.
Abstract: A photomask and integrated circuit manufactured by eliminating design rule violations during construction of a mask layout block are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a selected position for a polygon in a mask layout block, identifying a design rule violation in the mask layout block if the selected position is less than a design rule from a technology file, and automatically preventing the polygon from being placed in the mask layout block at the selected position if the design rule violation is identified.
24 citations
Patent•
25 Oct 2001
TL;DR: In this article, a method of photolithographically forming an integrated circuit feature, such as a gate electrode (15), or a patterned insulator feature, is disclosed, and a critical dimension for a photolithography process defines a minimum line width of photoresist or other masking material that may be patterned by the process.
Abstract: A method of photolithographically forming an integrated circuit feature, such as a conductive structure, for example a gate electrode (15), or such as a patterned insulator feature, is disclosed. A critical dimension (CD) for a photolithography process defines a minimum line width of photoresist or other masking material that may be patterned by the process. A photomask (20, 30, 40, 50, 60) has a mask feature (25, 35, 45, 55, 65) that has varying width portions along its length. The wider portions have a width (L1) that is at or above the critical dimension of the process, while the narrower portions have a width (L2) that is below the critical dimension of the process. In the case of a patterned etch of a conductor, photoexposure and etching of conductive material using the photomask (20, 30, 40, 50, 60) defines a gate electrode (15) for a transistor (10) that has a higher drive current than a transistor having a uniform gate width at the critical dimension.
24 citations
Patent•
02 Feb 2004TL;DR: In this article, a low reflective photomask blank suitable for shortened exposure wavelengths is disclosed, which is characterized by comprising an antireflective film, which at least contains silicon and oxygen and/or nitrogen on the light-shielding film.
Abstract: A low reflective photomask blank suitable for shortened exposure wavelengths is disclosed. A photomask blank (1) having a single-layer or multilayer light-shielding film (3) arranged on a translucent substrate (2) and mainly containing a metal is characterized by comprising an antireflective film (6), which at least contains silicon and oxygen and/or nitrogen, on the light-shielding film (3).
24 citations