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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


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Patent
10 Nov 2009
TL;DR: In this article, a method for fabricating image sensor is described, where the substrate comprises a plurality of photodiodes, forming at least one dielectric layer and a passivation layer on surface of the substrate.
Abstract: A method for fabricating image sensor is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a plurality of photodiodes; forming at least one dielectric layer and a passivation layer on surface of the substrate; using a patterned photomask to perform a first pattern transfer process for forming a plurality of trenches corresponding to each photodiode in the passivation layer; forming a plurality of color filters in the trenches; covering a planarizing layer on the color filters; and using the patterned photomask to perform a second pattern transfer process for forming a plurality of microlenses corresponding to each color filter on the planarizing layer.

24 citations

Patent
28 Dec 2001
TL;DR: In this paper, the authors proposed a photomask blank consisting of a light shielding film containing an antireflection film, which is formed on a transparent substrate and has a layered structure of a first light-shielding film made of chromium nitride and a second light-healing film made with chromium carbide.
Abstract: PROBLEM TO BE SOLVED: To decrease the film stress in a light shielding film containing a layer having an antireflective function in the manufacture of a photomask blank. SOLUTION: The photomask blank 1 comprises a light shielding film containing an antireflection film 5 having an antireflective function and formed on a transparent substrate 2. The light shielding film has a layered structure of a first light shielding film 3 made of chromium nitride and a second light shielding film 4 made of chromium carbide as well as the antireflection film 5. The light shielding film is deposited to 60 to 77 nm total film thickness. COPYRIGHT: (C)2003,JPO

24 citations

Patent
26 Nov 1985
TL;DR: In this article, a method for measuring the thickness of a very thin transparent film formed on a photomask or wafer for an integrated circuit is described. But the method is based on a single-dimensional image sensor array with a resolution of more than 2 10.
Abstract: Apparatus and a method are disclosed for measuring the thickness of a very thin transparent film formed, for example, on a photomask or wafer for an integrated circuit Diffracted reflected light from a film specimen is converted photoelectrically by use of a one dimensional image sensor array and then by an A/D converter having a resolution of more than 2 10 , which allows for discrimination into 1,000 graduations of output level Enhanced precision in determining film thickness is obtained by utilizing this high discrimination to first determine the variations among individual elements of the one dimensional sensor array and compensating for them, as well as by using known averaging and statistical techniques to generate output for comparison to reference data from film specimens of known thickness

24 citations

Patent
24 Jun 1991
TL;DR: In this article, a system for inspecting and measuring the dimensions of patterned features on lithographic photomasks includes a confocal scanning microscope beneath which is mounted the photomask to be inspected.
Abstract: A system for inspecting and measuring the dimensions of patterned features on lithographic photomasks includes a confocal scanning microscope beneath which is mounted the photomask to be inspected. The photomask is moved to permit the imaging beam from the microscope to record reflectivity information at closely spaced points along a scan line at the metal-substrate interface within the photomask, and the unpatterned side of the mask is positioned facing the microscope so that the imaging beam passes through the transparent substrate material of the mask to the desired measurement plane. An objective lens specially corrected for imaging through transparent materials is used in the optical system, and compensating glass plates may be selectively placed between the objective lens and the photomask when the substrate of the mask is thinner than the thickness of transparent material for which the objective lens was corrected.

24 citations

Journal ArticleDOI
TL;DR: While the 70 nm technology node will push resolution harder then ever before, the design rules, EDA tools, and layout methodologies developed in the past lay the foundation for the attack on this challenging technology node.
Abstract: The International Technology Roadmap for Semiconductors lists F2 (157 nm exposure wavelength) optical lithography and extreme ultraviolet (EUV) next generation lithography as the two most feasible lithography solutions for the 70 nm technology node. It is very likely that both of these lithography solutions will be late, forcing ArF (193 nm exposure wavelength) lithography to operate at unprecedented resolution levels. Lithographically, alternating phase shifted masks (altPSM) can achieve the resolution required to manufacture 70 nm logic products with ArF lithography equipment [P. Schiavone, F. Lalanne, and A. Prola, "Clear field alternating PSM for 193 nm lithography," Proc. SPIE 3679, 582-589 (1999) and M. Fritz et al., "Application of chromeless phase-shift masks to sub-100 nm SOI CMOS transistor fabrication," Proc. SPIE 4000, 388-407 (2000)], but technical and logistical challenges associated with the broad implementation of altPSM require novel and invasive EDA solutions which have caused the industry to shy away from altPSM in the past. Since the resolution capabilities of altPSM are well understood in the lithography community, this paper will focus on the challenges facing altPSM implementation for the polysilicon gate level and will present the results of a detailed altPSM design feasibility study done at IBM for the 180 nm technology node. While the 70 nm technology node will push resolution harder then ever before, the design rules, EDA tools, and layout methodologies developed in the past lay the foundation for our attack on this challenging technology node.

24 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195