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Photomask

About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.


Papers
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Patent
07 Jul 1993
TL;DR: In this paper, a case for a photomask comprising a case main unit with an upper opening for accommodating the photomasks and a lid for the opening of the main unit, cushion materials are provided on the inner bottom of the case and on the upper ceiling of the lid.
Abstract: The present invention relates to a case for a photomask to prevent generation of dust which might attach to and stain a photomask or the photomask pellicle. In a case for a photomask comprising a case main unit with an upper opening for accommodating the photomask and a lid for the opening of the case main unit, cushion materials are provided on the inner bottom of the case main unit and on the inner ceiling of the lid. The photomask is elastically squeezed between the cushion materials when accommodated. Thus, shaking and rattling during transportation are prevented to minimize the generation of dust. As the cushion material, a rubber material having a smooth surface on one side and a coarse surface on the other side is used.

24 citations

Patent
24 Aug 2011
TL;DR: In this article, an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor is used to simplify the manufacturing process of a transistor, and to manufacture a light-emitting display device without an additional step.
Abstract: An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.

24 citations

Proceedings ArticleDOI
05 Oct 2007
TL;DR: In this paper, the authors evaluated the feasibility of inspecting the printed wafer as an alternative way for the high-sensitivity defect inspection of photomasks, and showed that wafer inspection is able to provide a full defect evaluation of advanced photomask with the specific advantage of assessing the actual printability of arbitrary defects.
Abstract: Defect inspection is one of the major challenges in the manufacturing process of photomasks. The absence of any printing defect on patterned mask is an ultimate requirement for the mask shop, and an increasing effort is spent in order to detect and subsequently eliminate these defects. Current DUV inspection tools use wavelengths five times or more larger than the critical defect size on advanced photomasks. This makes the inspectability of high-end mask patterns (including strong OPC and small SRAF's) and sufficient defect sensitivity a real challenge. The paper evaluates the feasibility of inspecting the printed wafer as an alternative way for the high-sensitivity defect inspection of photomasks. Defects originating in the mask can efficiently be filtered as repeated defects in the various dies on wafer. Using a programmed-defect mask of 65-nm technology, a reliable detection of the printing defects was achieved with an optimized inspection process. These defects could successfully be traced back to the photomask in a semi-automated process in order to enable a following repair step. This study shows that wafer inspection is able to provide a full defect qualification of advanced photomasks with the specific advantage of assessing the actual printability of arbitrary defects.

24 citations

Journal ArticleDOI
TL;DR: Through the successful fabrication of 3D SiO(2) MOEs by gray-tone lithography and reactive ion etching, this work shows that the MTMO grayscale photomask has good practical applicability in the laboratory and in industry.
Abstract: One-step gray-tone lithography is the most effective approach to making three-dimensional (3D) micro-optical elements (MOEs). Metal-transparent-metallic-oxide (MTMO) grayscale masks are novel and quite cost effective. In this paper, through the successful fabrication of 3D SiO(2) MOEs by gray-tone lithography and reactive ion etching, we thoroughly investigate the practical technique needs of MTMO grayscale masks on metallic nanofilms. Design calibration, pattern transfer, resolution, lifetime, and mask protection of grayscale masks have been verified. This work shows that the MTMO grayscale photomask has good practical applicability in the laboratory and in industry.

23 citations

Patent
02 Jan 2013
TL;DR: In this article, a method for transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout was proposed.
Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.

23 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202281
202150
2020124
2019179
2018195