Topic
Photomask
About: Photomask is a research topic. Over the lifetime, 7917 publications have been published within this topic receiving 54524 citations. The topic is also known as: photoreticle & reticle.
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29 Jun 1998
TL;DR: In this article, a method of obtaining rigorous solutions to Maxwell's equations for the transmission of light through a photomask, both chrome-based and phase-shifting, is presented.
Abstract: A method of obtaining rigorous solutions to Maxwell's equations for the transmission of light through a photomask, both chrome-based and phase-shifting, is presented. The electromagnetic simulator will predict the transmission of light through the mask taking into account material properties, width, and thickness of the structures on the mask. This electromagnetic simulation will then be incorporated into the software package PROLITH/2 for complete simulation down to the resist level. Examples of lithography simulation using these rigorous solutions will be presented.
23 citations
Patent•
28 Jan 1986TL;DR: In this article, a photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate is described, and a patterning mask is provided by light or electron beam, followed by a developing step.
Abstract: A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.
23 citations
Patent•
13 Aug 2005
TL;DR: In this paper, the transmittance function was used as a compensator for lens imperfections in a projection lithography tool, and a photomask pattern was synthesized from the projected diffraction image by minimizing differences between the target pattern and another pattern.
Abstract: An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.
23 citations
Patent•
TSMC1
TL;DR: In this article, the authors proposed a method of fabricating a semiconductor device by providing an integrated circuit layout plan, which contains a plurality of semiconductor features, and selecting a subset of the features for decomposition as part of a double patterning process.
Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing an integrated circuit layout plan, the integrated circuit layout plan containing a plurality of semiconductor features. The method includes selecting a subset of the features for decomposition as part of a double patterning process. The method includes designating a relationship between at least a first feature and a second feature of the subset of the features. The relationship dictates whether the first and second features are assigned to a same photomask or separate photomasks. The designating is carried out using a pseudo feature that is part of the layout plan but does not appear on a photomask. The method may further include a double patterning conflict check process, which may include an odd-loop check process.
23 citations
Patent•
19 Sep 1977
TL;DR: In this paper, the relative thickness of the two chromium films and the chromium oxide film is adjusted to improve resolution of a pattern and to decrease reflectance of the photomask blank.
Abstract: The photomask blank comprises a transparent substrate, a first chromium film formed on the substrate by sputtering, a second chromium film formed on the first chromium film by vacuum evaporation and a chromium oxide film by vacuum evaporation. The relative thickness of the two chromium films and the chromium oxide film is adjusted to improve resolution of a pattern and to decrease reflectance.
23 citations