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Showing papers on "Photonic crystal published in 1988"


Journal ArticleDOI
TL;DR: In this article, a novel nonlinear waveguide structure capable of implementation in multiquantum well material is analyzed, and it is shown that the defocusing nonlinearity associated with the fundamental absorption edge of semiconductor material imposes a basic design requirement on the waveguide, and that practical device implementation of the effects described will require consideration of the tradeoff which arises between attainable optical non-linearity and acceptable optical absorption in the structure.
Abstract: A novel nonlinear waveguide structure capable of implementation in multiquantum well material is analyzed. It is shown that the defocusing nonlinearity associated with the fundamental absorption edge of semiconductor material imposes a basic design requirement on the waveguide structure. Results for a specific structure designed for operation at a wavelength of 1.55 mu m show a form of optical limiter action which, for representative values of the semiconductor nonlinearity, is found to be operative at about 100 mu W of launched optical power. It is concluded that practical device implementation of the effects described will require consideration of the tradeoff which arises between attainable optical nonlinearity and acceptable optical absorption in the structure. >

14 citations


Journal ArticleDOI
01 Sep 1988
TL;DR: In this paper, it was shown that the effect of localized states in the minority carrier band tail is comparable to or more important than that due to deep states and modifies the lifetime of minority carriers significantly.
Abstract: Shockley-Read-Hall recombination center density due to the localized states in the minority carrier band tail has been calculated, It is shown that in heavily doped silicon, the effect of these band tail states is comparable to or more important than that due to deep states and modifies the lifetime of minority carriers significantly.