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Photoresist

About: Photoresist is a research topic. Over the lifetime, 24473 publications have been published within this topic receiving 216902 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the characterization of a home-made negative photoresist developed by IBM is described, called SU-8, which can be produced with commercially available materials and has an outstanding aspect ratio near 15 for lines and 10 for trenches, combined with the electroplating of copper allow the fabrication of highly integrated electromagnetic coils.
Abstract: This paper describes the characterization of a home-made negative photoresist developed by IBM. This resist, called SU-8, can be produced with commercially available materials. Three blends were prepared for this article and some of its optical and mechanical properties are presented. One of its numerous advantages is the broad range of thicknesses which can be obtained in one spin: from 750 nm to with a conventional spin coater. The resist is exposed with a standard UV aligner and has an outstanding aspect ratio near 15 for lines and 10 for trenches. These ratios combined with the electroplating of copper allow the fabrication of highly integrated electromagnetic coils.

1,045 citations

Journal ArticleDOI
TL;DR: The SU-8 photoresist has become the favourite photoreist for high-aspect-ratio (HAR) and three-dimensional (3D) lithographic patterning due to its excellent coating, planarization and processing properties as well as its mechanical and chemical stability as mentioned in this paper.
Abstract: SU-8 has become the favourite photoresist for high-aspect-ratio (HAR) and three-dimensional (3D) lithographic patterning due to its excellent coating, planarization and processing properties as well as its mechanical and chemical stability. However, as feature sizes get smaller and pattern complexity increases, particular difficulties and a number of material-related issues arise and need to be carefully considered. This review presents a detailed description of these effects and describes reported strategies and achieved SU-8 HAR and 3D structures up to August 2006.

813 citations

Patent
28 Oct 1988
TL;DR: In this paper, a deflectable beam spatial light modulator formed from a structure of a reflecting layer on a spacer layer, typically photoresist, which in turn is on a substrate containing electronic addressing circuitry is disclosed.
Abstract: A deflectable beam spatial light modulator formed from a structure of a reflecting layer, typically metal, on a spacer layer, typically photoresist, which in turn is on a substrate containing electronic addressing circuitry is disclosed. Also, the method of fabrication including a plasma etch after dicing of the substrate into chips is disclosed.

685 citations

Book
01 Jan 2000
TL;DR: In this article, the authors present a detailed overview of the IC fabrication process and its application in the semiconductor industry, including the following: 1. IC Fabrication Process Overview. 2. Characteristics of Semiconductor Materials. 3. Device Technologies.
Abstract: 1. Introduction to the Semiconductor Industry. 2. Characteristics of Semiconductor Materials. 3. Device Technologies. 4. Silicon and Wafer Preparation. 5. Chemicals in Semiconductor Fabrication. 6. Contamination Controls in Wafer Fabs. 7. Metrology and Defect Inspection. 8. Gas Control in Process Chambers. 9. IC Fabrication Process Overview. 10. Oxidation. 11. Deposition. 12. Metallization. 13. Photolithography: Vapor Prime to Soft Bake. 14. Photolithography: Alignment and Exposure. 15. Photolithography: Photoresist Development and Advanced Lithography. 16. Etch. 17. Ion Implant. 18. Chemical Mechanical Planarization. 19. Wafer Test. 20. Assembly and Packaging. Appendices. Glossary. Index.

489 citations

Patent
19 Feb 2004
TL;DR: In this paper, a method and corresponding article of manufacture are provided for manufacturing a semiconductor device with contact holes of the same step formed by two photolithography processes, where the manufacture includes forming a photoresist pattern by a first photolithographic process on an insulating interlayer in which a first contact hole is formed, the photorensist pattern covering the first contact holes, etching the inner layer to form a second contact hole by using the photoresists pattern as an etching mask, and partially removing the pattern to remove an etch byproduct from the
Abstract: A method and corresponding article of manufacture are provided for manufacturing a semiconductor device with contact holes of the same step formed by two photolithography processes, where the manufacture includes forming a photoresist pattern by a first photolithography process on an insulating interlayer in which a first contact hole is formed, the photoresist pattern covering the first contact hole, etching the insulating interlayer to form a second contact hole by using the photoresist pattern as an etching mask, partially removing the photoresist pattern to remove an etch by-product from the second contact hole, and performing a process on the second contact hole by using the photoresist pattern residue as a mask to thereby decrease the number of photo processes and simplify the manufacturing process

472 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023168
2022314
2021162
2020520
2019740
2018793