Topic
Plasma ashing
About: Plasma ashing is a research topic. Over the lifetime, 411 publications have been published within this topic receiving 4753 citations.
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TL;DR: Nitric acid proved to be the most effective wet ashing agent with mean concentrations for iron, copper, and zinc differed from NBS certified values by less than 1.5% while those for manganese differed by 4%.
Abstract: A multitude of methods exists at present for the solubilization of biological tissues for atomic absorption analysis. We have examined several common methods of wet ashing using NBS bovine liver in order to determine which acids, acid combinations, or bases should be used as digesting agents for accurate and precise measurement of iron, copper, zinc, and manganese. Nitric acid proved to be the most effective wet ashing agent. With nitric acid, mean concentrations for iron, copper, and zinc differed from NBS certified values by less than 1.5% while those for manganese differed by 4%.
404 citations
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TL;DR: Standard methods for the Examination of Water and Wastewater, 13th ed.
Abstract: (1) \"Standard Methods for the Examination of Water and Wastewater\", 13th ed., American Public Health Association, Washington, DC, 1971, p 339. (2) \"Methods for Chemical Analysis of Water and Wastes\", U.S. Environmental Protection Agency, Washington, DC, 1974, p 157. (3) L. K . Wang, J. Am. Water Works Assoc., 67 (1). 19-21 (1975). (4) L. K . Wang, W. W. Shuster. and P. J. Panzardi, J. Am. Water Works Assoc., 67 (4), 182-184 (1975). (5) A. S. Weatherburn, J. Am. OilChem. Soc., 28, 233-235 (1950). (6) G. R . Edwards and M. E. Ginn. Sewage Ind. Wastes, 26, 945-953
315 citations
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TL;DR: In this paper, the progress made in plasma etching technologies is described from the viewpoint of requirements for the manufacturing of devices, and critical applications of RIE, isotropic etching, and plasma ashing/cleaning to form precisely controlled profiles of high-aspect-ratio contacts (HARC), gate stacks, and shallow trench isolation (STI) in the front end of line (FEOL) are described in detail.
Abstract: Plasma etching technologies such as reactive ion etching (RIE), isotropic etching, and ashing/plasma cleaning are the currently used booster technologies for manufacturing all silicon devices based on the scaling law. The needs-driven conversion from the wet etching process to the plasma/dry etching process is reviewed. The progress made in plasma etching technologies is described from the viewpoint of requirements for the manufacturing of devices. The critical applications of RIE, isotropic etching, and plasma ashing/cleaning to form precisely controlled profiles of high-aspect-ratio contacts (HARC), gate stacks, and shallow trench isolation (STI) in the front end of line (FEOL), and also to form precise via holes and trenches used in reliable Cu/low-k (low-dielectric-constant material) interconnects in the back end of line (BEOL) are described in detail. Some critical issues inherent to RIE processing, such as the RIE-lag effect, the notch phenomenon, and plasma-induced damage including charge-up damage are described. The basic reaction mechanisms of RIE and isotropic etching are discussed. Also, a procedure for designing the etching process, which is strongly dependent on the plasma reactor configuration, is proposed. For the more precise critical dimension (CD) control of the gate pattern for leading-edge devices, the advanced process control (APC) system is shown to be effective.
254 citations
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14 May 2001
TL;DR: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma as mentioned in this paper.
Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
162 citations