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Plasma-enhanced chemical vapor deposition

About: Plasma-enhanced chemical vapor deposition is a research topic. Over the lifetime, 16708 publications have been published within this topic receiving 267721 citations. The topic is also known as: PECVD.


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Journal ArticleDOI
TL;DR: The principles of the atomic layer deposition (ALD) method are presented in this paper emphasizing the importance of precursor and surface chemistry, with a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps.

1,166 citations

Journal ArticleDOI
TL;DR: In this paper, the growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system was reported, and the growth properties were studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure.
Abstract: The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial thickness of the catalyst layer. The alignment of the nanotubes depends on the electric field. Our results indicate that the growth occurs by diffusion of carbon through the Ni catalyst particle, which rides on the top of the growing tube.

1,060 citations

Journal ArticleDOI
23 May 2012-ACS Nano
TL;DR: Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.
Abstract: Field effect transistors using ultrathin molybdenum disulfide (MoS2) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS2 devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS2 field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS2. Uniform encapsulation of MoS2 transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

951 citations

Journal ArticleDOI
TL;DR: In this paper, a large variety of polymers have been proposed for use as materials with low dielectric constants for applications in microelectronics, including polyimides, heteroaromatic polymers, poly(aryl ether)s, fluoropolymers, hydrocarbon polymers without any polar groups, films deposited from the gas phase by chemical vapor deposition, plasma enhanced chemical vapor (PEVD) and other techniques.

949 citations

Journal ArticleDOI
TL;DR: In this article, the authors explored the possibility of the existence of a common scale, which can be used to gauge bond strength between various surfaces and found that the changes in wettability of surfaces owing to various levels of plasma exposure can be a useful parameter to gauge the bond strength.
Abstract: An issue in microfabrication of the fluidic channels in glass/poly (dimethyl siloxane) (PDMS) is the absence of a well-defined study of the bonding strength between the surfaces making up these channels. Although most of the research papers mention the use of oxygen plasma for developing chemical (siloxane) bonds between the participating surfaces, yet they only define a certain set of parameters, tailored to a specific setup. An important requirement of all the microfluidics/biosensors industry is the development of a general regime, which defines a systematic method of gauging the bond strength between the participating surfaces in advance by correlation to a common parameter. This enhances the reliability of the devices and also gives a structured approach to its future large-scale manufacturing. In this paper, we explore the possibility of the existence of a common scale, which can be used to gauge bond strength between various surfaces. We find that the changes in wettability of surfaces owing to various levels of plasma exposure can be a useful parameter to gauge the bond strength. We obtained a good correlation between contact angle of deionized water (a direct measure of wettability) on the PDMS and glass surfaces based on various dosages or oxygen plasma treatment. The exposure was done first in an inductively coupled high-density (ICP) plasma system and then in plasma enhanced chemical vapor deposition (PECVD) system. This was followed by the measurement of bond strength by use or the standardized blister test.

825 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023123
2022218
2021207
2020299
2019348
2018368