About: Plating is a research topic. Over the lifetime, 51294 publications have been published within this topic receiving 305628 citations.
Papers published on a yearly basis
TL;DR: This work demonstrates that an aqueous electrolyte based on Zn and lithium salts at high concentrations is a very effective way to address irreversibility issues and brings unprecedented flexibility and reversibility to Zn batteries.
Abstract: Metallic zinc (Zn) has been regarded as an ideal anode material for aqueous batteries because of its high theoretical capacity (820 mA h g–1), low potential (−0.762 V versus the standard hydrogen electrode), high abundance, low toxicity and intrinsic safety. However, aqueous Zn chemistry persistently suffers from irreversibility issues, as exemplified by its low coulombic efficiency (CE) and dendrite growth during plating/ stripping, and sustained water consumption. In this work, we demonstrate that an aqueous electrolyte based on Zn and lithium salts at high concentrations is a very effective way to address these issues. This unique electrolyte not only enables dendrite-free Zn plating/stripping at nearly 100% CE, but also retains water in the open atmosphere, which makes hermetic cell configurations optional. These merits bring unprecedented flexibility and reversibility to Zn batteries using either LiMn2O4 or O2 cathodes—the former deliver 180 W h kg–1 while retaining 80% capacity for >4,000 cycles, and the latter deliver 300 W h kg–1 (1,000 W h kg–1 based on the cathode) for >200 cycles.
TL;DR: The N-doped graphene modified Li metal anode exhibits a dendrite-free morphology during repeated Li plating and demonstrates a high Coulombic efficiency of 98 % for near 200 cycles.
Abstract: Lithium (Li) metal is the most promising electrode for next-generation rechargeable batteries. However, the challenges induced by Li dendrites on a working Li metal anode hinder the practical applications of Li metal batteries. Herein, nitrogen (N) doped graphene was adopted as the Li plating matrix to regulate Li metal nucleation and suppress dendrite growth. The N-containing functional groups, such as pyridinic and pyrrolic nitrogen in the N-doped graphene, are lithiophilic, which guide the metallic Li nucleation causing the metal to distribute uniformly on the anode surface. As a result, the N-doped graphene modified Li metal anode exhibits a dendrite-free morphology during repeated Li plating and demonstrates a high Coulombic efficiency of 98 % for near 200 cycles.
••20 Feb 2008
TL;DR: In this paper, the authors present a survey of the current state of the art in IONIC LIQUIDS and propose a framework for evaluating the performance of Ionic liquids in the AlCl3-based first generation Ionic liquid.
Abstract: PREFACE BASIC CONSIDERATIONS OF DEPOSITION IN IONIC LIQUIDS SYNTHESIS OF IONIC LIQUIDS AlCl3 Based First Generation Ionic Liquids Air and Water Stable Ionic Liquids Deep Eutectic Solvents PHYSICOCHEMICAL PROPERTIES OF IONIC LIQUIDS ELECTRODEPOSITION OF METALS Metal Deposition in AlCl3 Based Ionic Liquids Metal Deposition in Air and Water Stable Ionic Liquids Metal Deposition in Deep Eutectic Solvents Troublesome Aspects ELECTRODEPOSITION OF ALLOYS ELECTRODEPOSITION OF SEMICONDUCTORS ELECTRODEPOSITION OF CONDUCTING POLYMERS ELECTRODEPOSITION OF NANOCRYSTALLINE METALS AND ALLOYS ELECTRODEPOSITION ON THE NANOSCALE PLASMA ELECTROCHEMISTRY TECHNICAL ASPECTS Counter Electrode Reactions / Metal Dissolution Reference Electrodes Upscaling Recycling Impurities SURFACE PRETREATMENT / ELECTROPOLISHING PLATING PROTOCOLS FUTURE DIRECTIONS
09 Oct 2008
TL;DR: In this article, a spin-coated resin film is applied to a pad electrode and a metal layer for plating and a copper-plating layer for oxidation-resistant film is formed on the pad electrode.
Abstract: PROBLEM TO BE SOLVED: To solve the problem that the resistance on a pad electrode is less apt to be reduced by an oxide film on the surface of the pad electrode in the conventional semiconductor device. SOLUTION: A metal layer 4 for an oxidation-resistant film is formed on a pad electrode 3 in a semiconductor device. The metal layer 4 for the oxidation-resistant film is exposed from an opening region 8 in a spin-coat resin film 7 on the pad electrode 3, and a metal layer 9 for plating and a copper-plating layer 10 are formed on the metal layer 4 for the oxidation-resistant film. According to this structure, on the pad electrode 3, the upper surface of the pad electrode 3 is less apt to be oxidized, and the metal layer 4 for the oxidation-resistant film with an extremely smaller resistant value than an oxidized film is made to serve as a current channel and the resistance on the pad electrode 3 is reduced. COPYRIGHT: (C)2009,JPO&INPIT
Trending Questions (10)