Polycrystalline silicon

About: Polycrystalline silicon is a research topic. Over the lifetime, 19554 publications have been published within this topic receiving 198222 citations. The topic is also known as: polysilicon & poly-Si.

Solid-state imaging device and method of manufacturing the same

Abstract: The invention reduces dark current of a solid-state imaging device A solid-state imaging device containing photodiode comprises: a diffusion layer placed side by side with the photodiode on the surface of an N-type semiconductor substrate; a first polycrystalline silicon electrode provided on the diffusion layer; a first Al interconnect provided on the first polycrystalline silicon electrode; a contact plug connecting the lower surface of the first Al interconnect and the first polycrystalline silicon electrode; and an adhesive film that is a titanium-containing film selectively provided within the contact plug

Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

Abstract: We have examined the interfaces in Zr-silicate gate dielectrics grown on Si substrates using electron energy loss spectroscopy. The Zr-silicate interface is found to be stable with the Si substrate and the polycrystalline silicon (poly-Si) electrode under annealing to 1050 °C. At this interface, a 0.35 nm wide Zr-free interface region is observed in the as-deposited film, and does not change on annealing. The Zr-free region is too thin to take on the bulk SiO2 electronic structure, and thus is unlikely to compromise the dielectric properties of the device. For films with an Al electrode, a 2 nm reaction layer forms at the Zr-silicate interface.

Process for elevated source/drain field effect structure

Abstract: A process for the fabrication of elevated source/drain IGFET devices is disclosed. In accordance with one embodiment of the process, a silicon substrate is provided which is divided into active and field regions by a field oxide. A gate oxide is formed over the active region and a thin layer of polycrystalline silicon and a thick layer of silicon nitride are deposited on the gate oxide. The polycrystalline silicon and the silicon nitride are etched to form a stacked structure, with the spacers having substantially the same height as the stacked structure, in the pattern of the gate electrode. Sidewall spacers are formed on the edges of the stacked structure and the silicon nitride is removed. Polycrystalline silicon is then deposited onto the polycrystalline silicon and the exposed portions of the source and drain regions to complete the gate electrode and to form the source and drain electrodes. The selectively deposited polycrystalline silicon extends upwardly from the source and drain regions onto the field oxide. The sidewall spacers provide physical and electrical isolation between the gate electrode and the adjacent source and drain electrodes.

Mechanical and optical properties of surface micromachined torsional mirrors in silicon, polysilicon and aluminum

Abstract: This paper presents a comparative study of surface micromachined structures fabricated in three different materials, using torsional micromirrors as test vehicle. The devices are realized in single-crystal silicon, polycrystalline silicon and aluminum. Mechanical properties such as internal strains, sticking phenomena, yield strains and endurance test resistance as well as optical properties such as surface reflectivities and scattering characteristics are investigated on the devices. the characterization points out that the silicon and polysilicon structures present higher yield strains and are less prone to surface sticking while the aluminum mirrors have higher surface refiectivities.